US2005023666A1PendingUtilityA1

Semiconductor device and method of fabricating the same, circuit board, and electronic instrument

Assignee: SEIKO EPSON CORPPriority: Jul 4, 2003Filed: Jun 17, 2004Published: Feb 3, 2005
Est. expiryJul 4, 2023(expired)· nominal 20-yr term from priority
Inventors:Yoshiharu Ogata
H10W 99/00H10W 90/754H10W 90/734H10W 90/722H10W 90/26H10W 74/117H10W 74/00H10W 72/07533H10W 72/07521H10W 72/07353H10W 72/07337H10W 72/07327H10W 72/07141H10W 72/5522H10W 72/5363H10W 72/952H10W 72/931H10W 72/884H10W 72/536H10W 72/354H10W 72/334H10W 72/075H10W 72/073H10W 72/59H10W 90/00
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Claims

Abstract

A method of fabricating a semiconductor device, including: preparing a wiring board on which is mounted a first semiconductor chip having a plurality of first pads; electrically connecting each of the first pads to an interconnecting pattern of the first semiconductor chip by a wire; providing resin paste on the first semiconductor chip; mounting a second semiconductor chip having a plurality of second pads on the first semiconductor chip with the resin paste interposed therebetween; and forming a spacer by hardening the resin paste to fix the first and second semiconductor chips together, wherein the spacer is formed to extend under the second pads and further outward; and wherein the highest portion of the wire is disposed on the outer side of the first semiconductor chip.

Claims

exact text as granted — not AI-modified
1 . A method of fabricating a semiconductor device, comprising: 
 preparing a wiring board having an interconnecting pattern and on which is mounted a first semiconductor chip having a plurality of first pads;    electrically connecting each of the first pads to the interconnecting pattern by a wire;    providing resin paste on the first semiconductor chip;    mounting a second semiconductor chip having a plurality of second pads on the first semiconductor chip with the resin paste interposed between the first and second semiconductor chips such that at least part of the first pads is covered by the second semiconductor chip with a space between the first and second semiconductor chips; and    forming a spacer by hardening the resin paste between the first and second semiconductor chips to fix the first and second semiconductor chips together,    wherein the spacer is formed to extend under the second pads and further outward; and    wherein the highest portion of the wire is disposed on the outer side of the first semiconductor chip.    
     
     
         2 . A method of fabricating a semiconductor device, the method comprising: 
 preparing a wiring board having an interconnecting pattern and on which is mounted a first semiconductor chip having a plurality of first pads;    electrically connecting each of the first pads to the interconnecting pattern by a wire;    providing resin paste on the first semiconductor chip;    mounting a second semiconductor chip having a plurality of second pads on the first semiconductor chip with the resin paste interposed between the first and second semiconductor chips such that at least part of the first pads is covered by the second semiconductor chip with a space between the first and second semiconductor chips; and    forming a spacer by hardening the resin paste between the first and second semiconductor chips to fix the first and second semiconductor chips together,    wherein the spacer is formed to extend under the second pads and further outward; and    wherein the wire protrudes diagonally upward from a space above the first semiconductor chip.    
     
     
         3 . The method of fabricating a semiconductor device as defined in  claim 1 , further comprising: 
 making the resin paste flow out over the wiring board from the first semiconductor chip to form a fillet surrounding the first semiconductor chip.    
     
     
         4 . The method of fabricating a semiconductor device as defined in  claim 2 , further comprising: 
 making the resin paste flow out over the wiring board from the first semiconductor chip to form a fillet surrounding the first semiconductor chip.    
     
     
         5 . The method of fabricating a semiconductor device as defined in  claim 3 , wherein: 
 the resin paste is provided only over the first semiconductor chip; and    the resin paste flows out over the wiring board in the step of mounting the second semiconductor chip.    
     
     
         6 . The method of fabricating a semiconductor device as defined in  claim 4 , wherein: 
 the resin paste is provided only over the first semiconductor chip; and    the resin paste flows out over the wiring board in the step of mounting the second semiconductor chip.    
     
     
         7 . The method of fabricating a semiconductor device as defined in  claim 1 , wherein: 
 the resin paste includes a plurality of insulating balls; and    the insulating balls are interposed between the first and second semiconductor chips.    
     
     
         8 . The method of fabricating a semiconductor device as defined in  claim 2 , wherein: 
 the resin paste includes a plurality of insulating balls; and    the insulating balls are interposed between the first and second semiconductor chips.    
     
     
         9 . The method of fabricating a semiconductor device as defined in  claim 1 , 
 wherein the step of electrically connecting the first pads to the interconnecting pattern includes connecting the wire electrically to the interconnecting pattern at first and then connecting the wire electrically to one of the first pads.    
     
     
         10 . The method of fabricating a semiconductor device as defined in  claim 2 , 
 wherein the step of electrically connecting the first pads to the interconnecting pattern includes connecting the wire electrically to the interconnecting pattern at first and then connecting the wire electrically to one of the first pads.    
     
     
         11 . The method of fabricating a semiconductor device as defined in  claim 1 , 
 wherein the step of electrically connecting the first pads to the interconnecting pattern includes connecting the wire electrically to one of the first pads at first and then connecting the wire electrically to the interconnecting pattern.    
     
     
         12 . The method of fabricating a semiconductor device as defined in  claim 2 , 
 wherein the step of electrically connecting the first pads to the interconnecting pattern includes connecting the wire electrically to one of the first pads at first and then connecting the wire electrically to the interconnecting pattern.    
     
     
         13 . The method of fabricating a semiconductor device as defined in  claim 1 , further comprising: 
 electrically connecting each of the second pads to the interconnecting pattern by a wire, after the step of hardening the resin paste.    
     
     
         14 . The method of fabricating a semiconductor device as defined in  claim 2 , further comprising: 
 electrically connecting each of the second pads to the interconnecting pattern by a wire, after the step of hardening the resin paste.    
     
     
         15 . A semiconductor device comprising: 
 a wiring board having an interconnecting pattern;    a first semiconductor chip mounted on the wiring board and having a plurality of first pads;    a plurality of wires which electrically connect the interconnecting pattern and the first pads respectively;    a second semiconductor chip having a plurality of second pad and mounted on the first semiconductor chip such that at least part of the first pads is covered by the second semiconductor chip with a space between the first and second semiconductor chips; and    a spacer which is formed between the first and second semiconductor chips and to fix the first and second semiconductor chips,    wherein the spacer is formed to extend under the second pads and further outward; and    wherein the highest portion of each of the wires is disposed on the outer side of the spacer.    
     
     
         16 . A semiconductor device comprising: 
 a wiring board having an interconnecting pattern;    a first semiconductor chip mounted on the wiring board and having a plurality of first pads;    a plurality of wires which electrically connect the interconnecting pattern and the first pads respectively;    a second semiconductor chip having a plurality of second pad and mounted on the first semiconductor chip such that at least part of the first pads is covered by the second semiconductor chip with a space between the first and second semiconductor chips; and    a spacer which is formed between the first and second semiconductor chips and to fix the first and second semiconductor chips,    wherein the spacer is formed to extend under the second pads and further outward; and    wherein each of the wire protrudes diagonally upward from the spacer.    
     
     
         17 . The semiconductor device as defined in  claim 15 , further comprising: 
 a fillet disposed around the first semiconductor chip on the wiring board.    
     
     
         18 . The semiconductor device as defined in  claim 16 , further comprising: 
 a fillet disposed around the first semiconductor chip on the wiring board.    
     
     
         19 . The semiconductor device as defined in  claim 17 , 
 wherein the spacer and the fillet are of the same material.    
     
     
         20 . The semiconductor device as defined in  claim 18 , 
 wherein the spacer and the fillet are of the same material.    
     
     
         21 . The semiconductor device as defined in  claim 15 , 
 wherein the spacer includes a plurality of insulating balls.    
     
     
         22 . The semiconductor device as defined in  claim 16 , 
 wherein the spacer includes a plurality of insulating balls.    
     
     
         23 . A circuit board on which is mounted the semiconductor device as defined in  claim 15 .  
     
     
         24 . A circuit board on which is mounted the semiconductor device as defined in  claim 16 .  
     
     
         25 . An electronic instrument comprising the semiconductor device as defined in  claim 15 .  
     
     
         26 . An electronic instrument comprising the semiconductor device as defined in  claim 16.

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