Controlled dry etch of a film

Abstract

The controlled etch into a substrate or thick homogeneous film is accomplished by introducing a sacrificial film to gauge the depth to which the substrate/thick film has been etched. Optical endpointing the etch of the sacrificial film on the etch stop layer allows another element of process control over the depth of the primary trench or via.

1 . A device comprising: 
 a first layer;    an etch stop layer positioned over the first layer;    a second layer positioned over the etch stop layer;    a first trench positioned through the second layer, etch stop layer, and a portion of the first layer.    
   
   
       2 . A device, as defined in  claim 1 , wherein the etch stop layer is an oxide.  
   
   
       3 . A device, as defined in  claim 2 , wherein the first layer is c-Si and the second layer is amorphous silicon.  
   
   
       4 . A device, as defined in  claim 2 , wherein the first layer is c-Si and the second layer is epitaxial silicon.  
   
   
       5 . A device, as defined in  claim 2 , wherein the first layer is low-k dielectric and the second layer is an amorphous Si.  
   
   
       6 . A device, as defined in  claim 5 , wherein k is between 1 and 3.9.  
   
   
       7 . A device, as defined in  claim 1 , further comprising an intermediary layer interposing the etch stop layer and first layer, the trench further extending through the intermediary layer.  
   
   
       8 . A device, as defined in  claim 1 , further comprising a second trench positioned through the second layer, etch stop layer, and a portion of the first layer, wherein the second trench has a shallower depth than the first trench.  
   
   
       9 . A method for generating a first trench comprising: 
 depositing an etch stop film over a first layer, wherein the first layer is a c-Si substrate;    depositing a second layer over the etch stop film;    depositing a first photomask layer over the second layer;    patterning the first photomask layer;    patterning the second layer according to the first photomask layer; and    patterning the etch stop layer;    removing the first photomask layer; and    patterning the first layer according to the etch stop layer.    
   
   
       10 . A method, as defined in  claim 9 , wherein the etch stop film is an oxide.  
   
   
       11 . A method, as defined in  claim 9 , wherein the first layer is a c-Si substrate and the second layer is amorphous silicon.  
   
   
       12 . A method, as defined in  claim 11 , wherein patterning the amorphous silicon includes etching with chlorine based etch chemistry.  
   
   
       13 . A method, as defined in  claim 11 , wherein the first layer is a c-Si substrate and the second layer is epitaxial silicon.  
   
   
       14 . A method, as defined in  claim 9 , wherein patterning the etch stop layer includes patterning with wet etch chemistry.  
   
   
       15 . A method, as defined in  claim 9 , wherein patterning the etch stop layer includes patterning with dry etch chemistry.  
   
   
       16 . A method, as defined in  claim 9 , wherein patterning the amorphous silicon includes optical endpointing to determine when the etch reaches the etch stop.  
   
   
       17 . A method, as defined in  claim 16 , wherein optical endpointing includes applying optical emission spectra.  
   
   
       18 . A method, as defined in  claim 16 , wherein optical endpointing includes applying interferometry.  
   
   
       19 . A method, as defined in  claim 9 , further comprising: 
 depositing a second photomask layer;    patterning the second photomask layer;    patterning the second layer according to the second photomask layer; and    etching the first layer according to the etch stop layer to define an additional trench, wherein the additional trench has a shallower depth than the first trench.