US2005023537A1PendingUtilityA1

LED lamps

Priority: Nov 19, 1997Filed: Oct 6, 2003Published: Feb 3, 2005
Est. expiryNov 19, 2017(expired)· nominal 20-yr term from priority
H10W 90/00H10H 20/831H10H 20/858H10H 20/835H10H 20/819H10H 20/018H10H 20/856H10H 20/841H10H 20/8312
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Claims

Abstract

A high power LED lamp has a GaN chip placed over an AlGaInP chip. A reflector is placed between the two chips. Each of the chips has trenches diverting light for output. The chip pair can be arranged to produce white light having a spectral distribution in the red to blue region that is close to that of daylight. Also, the chip pair can be used to provide an RGB lamp or a red-amber-green traffic lamp. The active regions of both chips can be less than 50 microns away from a heat sink.

Claims

exact text as granted — not AI-modified
1 - 46 . Cancel.  
   
   
       47 . A method of manufacturing an inorganic LED comprising the steps of: 
 providing a growth substrate, and a support member;    growing on the growth substrate a structure comprising at least one semiconductor layer;    joining said structure to said support member; and    removing the growth substrate and subsequently growing at least one further semiconductor layer on said structure.    
   
   
       48 . A light source comprising at least four inorganic LEDs having different nominal colors of light output from each other.  
   
   
       49 . A light source according to  claim 48  wherein at least two of said LEDs are parts of one chip and are side by side.  
   
   
       50 . A light source comprising an inorganic LED in which a substantial proportion of the light generated by the LED is wave-guided in the LED; wherein the LED is coated with a phosphor layer that receives substantially all of the wave-guided light of the LED that escapes from the LED.

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