Hot plate for semiconductor producing/examining device

Abstract

An object of the present invention is to provide a hot plate for a semiconductor producing/examining device, in which hot plate, when an object to be heated such as a silicon wafer is heated in a state that the object is distanced by a certain distance from the heating face, air is less likely to stagnate between the silicon wafer and the heating face and thus the object to be heated can be evenly heated. Specifically, the hot plate for a semiconductor producing/examining device of the present invention comprises a resistance heating element formed on a surface of a ceramic substrate or inside the ceramic substrate, wherein the glossiness of the heating face of said ceramic substrate is 1.5% or more.

1 . A hot plate for a semiconductor producing/examining device, comprising a resistance heating element formed on a surface of a ceramic substrate or inside the ceramic substrate, 
 wherein the glossiness of the heating face of said ceramic substrate is 1.5% or more.    
   
   
       2 . The hot plate for a semiconductor producing/examining device according to  claim 1 , 
 wherein said ceramic substrate contains 0.5 to 10 weight % of oxygen.    
   
   
       3 . The hot plate for a semiconductor producing/examining device according to  claim 1 , 
 wherein said ceramic substrate is subjected to an annealing treatment.    
   
   
       4 . The hot plate for a semiconductor producing/examining device according to  claim 1 , 
 wherein said ceramic substrate is subjected to a cold isostatic pressing process before it is sintered.    
   
   
       5 . The hot plate for a semiconductor producing/examining device according to  claim 2 , 
 wherein said ceramic substrate is subjected to an annealing treatment.    
   
   
       6 . The hot plate for a semiconductor producing/examining device according to  claim 2 , 
 wherein said ceramic substrate is subjected to a cold isostatic pressing process before it is sintered.    
   
   
       7 . The hot plate for a semiconductor producing/examining device according to  claim 3 , 
 wherein said ceramic substrate is subjected to a cold isostatic pressing process before it is sintered.    
   
   
       8 . The hot plate for a semiconductor producing/examining device according to  claim 5 , 
 wherein said ceramic substrate is subjected to a cold isostatic pressing process before it is sintered.