Method and apparatus for chemically, mechanically, and/or electrolytically removing material from microelectronic substrates

Abstract

Method and apparatus for chemically, mechanically and/or electrolytically removing material from microelectronic substrates. A polishing medium for removing material can include a liquid carrier, an electrolyte disposed in the liquid carrier, and abrasives disposed in the liquid carrier, with the abrasives forming up to about 1% of the polishing liquid by weight. The polishing medium can further include a chelating agent. An electrical current can be selectively applied to the microelectronic substrate via the polishing liquid, and a downforce applied to the microelectronic substrate can be selected based on the level of current applied electrolytically to the microelectronic substrate. The microelectronic substrate can undergo an electrolytic and nonelectrolytic processing on the same polishing pad, or can be moved from one polishing pad to another while being supported by a single substrate carrier.

1 . A polishing medium for removing material from a microelectronic substrate, comprising a polishing liquid that includes: 
 a liquid carrier;    an electrolyte disposed in the liquid carrier and configured to transmit an electrical current between an electrode and the microelectronic substrate to electrolytically remove conductive material from the microelectronic substrate; and    abrasive elements disposed in the liquid carrier, wherein the abrasive elements form up to about 1% of the polishing liquid, by weight.    
   
   
       2 . The polishing medium of  claim 1  wherein the abrasive elements include colloidal abrasives that form up to about 0.5% of the polishing liquid, by weight.  
   
   
       3 . The polishing medium of  claim 1  wherein the abrasive elements include at least one of colloidal silica abrasives and colloidal alumina abrasives.  
   
   
       4 . The polishing medium of  claim 1 , further comprising a polishing pad having a polishing surface, and wherein the liquid carrier, the electrolyte and the abrasive elements are disposed adjacent to the polishing surface.  
   
   
       5 . The polishing medium of  claim 1 , further comprising a chelating agent disposed in the liquid carrier.  
   
   
       6 . The polishing medium of  claim 1 , further comprising a chelating agent disposed in the liquid carrier, and wherein the chelating agent includes at least one of ammonia and chloride.  
   
   
       7 . The polishing medium of  claim 1  wherein the liquid carrier includes de-ionized water.  
   
   
       8 . The polishing medium of  claim 1  wherein the polishing liquid is acidic.  
   
   
       9 . The polishing medium of  claim 1  wherein the polishing liquid is alkaline.  
   
   
       10 . The polishing medium of  claim 1  wherein the electrolyte includes ammonium phosphate.  
   
   
       11 . The polishing medium of  claim 1  wherein the electrolyte includes ammonium sulfate.  
   
   
       12 . The polishing medium of  claim 1 , further comprising a chelating agent disposed in the liquid carrier, and wherein the chelating agent includes ammonium hydroxide.  
   
   
       13 . The polishing medium of  claim 1 , further comprising a chelating agent disposed in the liquid carrier, and wherein the chelating agent includes ammonium chloride.  
   
   
       14 . The polishing medium of  claim 1 , further comprising a chelating agent disposed in the liquid carrier, and wherein the chelating agent is selected to bind with platinum ions.  
   
   
       15 . The polishing medium of  claim 1 , further comprising a chelating agent disposed in the liquid carrier, and wherein the chelating agent is selected to bind with copper ions.  
   
   
       16 . A polishing medium for removing material from a microelectronic substrate, comprising a polishing liquid that includes: 
 a liquid carrier;    an electrolyte disposed in the liquid carrier and configured to transmit an electrical current between an electrode and the microelectronic substrate to electrolytically remove a conductive material from the microelectronic substrate;    a chelating agent disposed in the liquid carrier and configured to bind with ions of the conductive material; and    abrasive elements disposed in the liquid carrier, wherein the abrasive elements form up to about 1% by weight of the polishing liquid.    
   
   
       17 . The polishing medium of  claim 16 , further comprising a polishing pad having a polishing surface, and wherein the liquid carrier, the electrolyte, the chelating agent and the abrasive elements are disposed adjacent to the polishing surface.  
   
   
       18 . The polishing medium of  claim 16  wherein the abrasive elements form up to about 0.5% of the polishing liquid, by weight.  
   
   
       19 . The polishing medium of  claim 16  wherein the abrasive elements include at least one of colloidal silica abrasives and colloidal alumina abrasives.  
   
   
       20 . The polishing medium of  claim 16  wherein the chelating agent includes at least one of ammonia and chloride.  
   
   
       21 . The polishing medium of  claim 16  wherein the chelating agent is selected to bind with platinum ions.  
   
   
       22 . The polishing medium of  claim 16  wherein the chelating agent is selected to bind with copper ions.  
   
   
       23 - 83 . (Cancelled)