US2005016987A1PendingUtilityA1

Ceramic heater

Assignee: IBIDEN CO LTDPriority: Apr 7, 2000Filed: Aug 19, 2004Published: Jan 27, 2005
Est. expiryApr 7, 2020(expired)· nominal 20-yr term from priority
H10P 72/0432H05B 3/143H05B 3/265
44
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Claims

Abstract

An objective of the present invention is to provide a ceramic heater making it possible to prevent a short circuit in its resistance heating element and heat a semiconductor wafer evenly. The ceramic heater of the present invention is a ceramic heater comprising: a ceramic substrate; an insulating layer having volume resistivity higher than that of said ceramic substrate, being formed on at least a part of said ceramic substrate; and a resistance heating element formed on said insulating layer.

Claims

exact text as granted — not AI-modified
1 . A ceramic heater comprising: 
 a ceramic substrate;    an insulating layer having volume resistivity higher than that of said ceramic substrate, being formed on at least a part of said ceramic substrate; and    a resistance heating element formed on said insulating layer.    
   
   
       2 . The ceramic heater according to  claim 1 , 
 wherein said ceramic substrate comprises a carbide ceramic or a nitride ceramic and said insulating layer comprises an oxide ceramic.    
   
   
       3 . The ceramic heater according to  claim 1 , 
 wherein the opposite side to the face where said resistance heating element is formed of said ceramic substrate is a heating face.    
   
   
       4 . The ceramic heater according to  claim 1 , wherein the thickness of said insulating layer is from 0.1 to 1000 μm.  
   
   
       5 . The ceramic heater according to  claim 1 , wherein the volume resistivity of said insulating layer is not less than 10 times larger than the volume resistivity of said ceramic substrate.  
   
   
       6 . A ceramic heater comprising a ceramic substrate and a resistance heating element formed on a surface of said ceramic substrate, 
 wherein said ceramic substrate is warped in one direction.    
   
   
       7 . The ceramic heater according to  claim 6 , 
 wherein the warp amount of said ceramic substrate is from 10 to 100 μm.    
   
   
       8 . The ceramic heater according to  claim 2 , 
 wherein the opposite side to the face where said resistance heating element is formed of said ceramic substrate is a heating face.    
   
   
       9 . The ceramic heater according to  claim 2 , 
 wherein the thickness of said insulating layer is from 0.1 to 1000 μm.    
   
   
       10 . The ceramic heater according to  claim 3 , 
 wherein the thickness of said insulating layer is from 0.1 to 1000 μm.    
   
   
       11 . The ceramic heater according to  claim 8 , 
 wherein the thickness of said insulating layer is from 0.1 to 1000 μm.    
   
   
       12 . The ceramic heater according to  claim 2 , 
 wherein the volume resistivity of said insulating layer is not less than 10 times larger than the volume resistivity of said ceramic substrate.    
   
   
       13 . The ceramic heater according to  claim 3 , 
 wherein the volume resistivity of said insulating layer is not less than 10 times larger than the volume resistivity of said ceramic substrate.    
   
   
       14 . The ceramic heater according to  claim 8 , 
 wherein the volume resistivity of said insulating layer is not less than 10 times larger than the volume resistivity of said ceramic substrate.

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