US2005016987A1PendingUtilityA1
Ceramic heater
Est. expiryApr 7, 2020(expired)· nominal 20-yr term from priority
Inventors:Yasuji Hiramatsu
H10P 72/0432H05B 3/143H05B 3/265
44
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Claims
Abstract
An objective of the present invention is to provide a ceramic heater making it possible to prevent a short circuit in its resistance heating element and heat a semiconductor wafer evenly. The ceramic heater of the present invention is a ceramic heater comprising: a ceramic substrate; an insulating layer having volume resistivity higher than that of said ceramic substrate, being formed on at least a part of said ceramic substrate; and a resistance heating element formed on said insulating layer.
Claims
exact text as granted — not AI-modified1 . A ceramic heater comprising:
a ceramic substrate; an insulating layer having volume resistivity higher than that of said ceramic substrate, being formed on at least a part of said ceramic substrate; and a resistance heating element formed on said insulating layer.
2 . The ceramic heater according to claim 1 ,
wherein said ceramic substrate comprises a carbide ceramic or a nitride ceramic and said insulating layer comprises an oxide ceramic.
3 . The ceramic heater according to claim 1 ,
wherein the opposite side to the face where said resistance heating element is formed of said ceramic substrate is a heating face.
4 . The ceramic heater according to claim 1 , wherein the thickness of said insulating layer is from 0.1 to 1000 μm.
5 . The ceramic heater according to claim 1 , wherein the volume resistivity of said insulating layer is not less than 10 times larger than the volume resistivity of said ceramic substrate.
6 . A ceramic heater comprising a ceramic substrate and a resistance heating element formed on a surface of said ceramic substrate,
wherein said ceramic substrate is warped in one direction.
7 . The ceramic heater according to claim 6 ,
wherein the warp amount of said ceramic substrate is from 10 to 100 μm.
8 . The ceramic heater according to claim 2 ,
wherein the opposite side to the face where said resistance heating element is formed of said ceramic substrate is a heating face.
9 . The ceramic heater according to claim 2 ,
wherein the thickness of said insulating layer is from 0.1 to 1000 μm.
10 . The ceramic heater according to claim 3 ,
wherein the thickness of said insulating layer is from 0.1 to 1000 μm.
11 . The ceramic heater according to claim 8 ,
wherein the thickness of said insulating layer is from 0.1 to 1000 μm.
12 . The ceramic heater according to claim 2 ,
wherein the volume resistivity of said insulating layer is not less than 10 times larger than the volume resistivity of said ceramic substrate.
13 . The ceramic heater according to claim 3 ,
wherein the volume resistivity of said insulating layer is not less than 10 times larger than the volume resistivity of said ceramic substrate.
14 . The ceramic heater according to claim 8 ,
wherein the volume resistivity of said insulating layer is not less than 10 times larger than the volume resistivity of said ceramic substrate.Join the waitlist — get patent alerts
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