Single-substrate-heat-processing apparatus for performing reformation and crystallization

Abstract

An insulating film consisting of first and second tantalum oxide layers is formed on a semiconductor wafer. First, an amorphous first layer is formed by CVD, and a reforming process for removing organic impurities contained in the first layer is carried out. Then, an amorphous second layer is formed by CVD on the first layer. Then, a reforming process for removing organic impurities contained in the second layer is carried out by supplying a process gas containing ozone into a process chamber while heating the wafer to a temperature lower than a crystallizing temperature over a certain period. Further, within the same process chamber, the wafer is successively heated to a second temperature higher than the crystallizing temperature, followed by cooling the wafer to a temperature lower than the crystallizing temperature so as to crystallize the first and second layers simultaneously.

1 - 20 . (Canceled).  
   
   
       21 . A single-substrate-heat-processing apparatus for performing a reforming process of removing organic impurities contained in a thin film deposited on a target substrate and a crystallizing process of crystallizing the thin film, the apparatus comprising: 
 an airtight process chamber;    a worktable disposed within the process chamber having a top surface configured to place the target substrate thereon;    a supply section configured to supply a process gas containing oxygen atoms into the process chamber;    an exhaust section configured to exhaust the process chamber;    a heater configured to heat the target substrate through the top surface of the worktable;    a temperature controller configured to control the heater;    a transmission window larger than the target substrate, formed in a ceiling of the process chamber and facing the worktable, the transmission window consisting essentially of a material transparent to ultraviolet rays and infrared rays;    an ultraviolet lamp and an infrared lamp juxtaposed with each other above the transmission window; and    a substantially dome-shaped light reflector covering the ultraviolet lamp and the infrared lamp, and having a curvature to reflect mixed light rays substantially uniformly onto the top surface of the worktable, the mixed light rays comprising ultraviolet rays from the ultraviolet lamp and infrared rays from the infrared lamp,    wherein the reforming process and the crystallizing process are performed substantially together or continuously, by supplying the process gas into the process chamber, while heating the target substrate by the heater and radiating the mixed light rays into the process chamber.    
   
   
       22 . The apparatus according to  claim 21 , wherein the temperature controller is configured to control the infrared lamp along with the heater.  
   
   
       23 . The apparatus according to  claim 21 , wherein the heater comprises a resistance heater built in the worktable.  
   
   
       24 . The apparatus according to  claim 21 , wherein the worktable is rotatable along with the target substrate placed thereon.  
   
   
       25 . The apparatus according to  claim 21 , wherein the supply section comprises a showerhead disposed between the worktable and the transmission window and having a number of gas spurting holes for delivering the process gas, the showerhead consisting essentially of a material transparent to ultraviolet rays and infrared rays.  
   
   
       26 . The apparatus according to  claim 25 , wherein the showerhead comprises an outer surrounding pipe larger than the target substrate and inside pipes forming a lattice connected inside the outer surrounding pipe, and the inside pipes include the gas spurting holes.  
   
   
       27 . The apparatus according to  claim 26 , wherein a projected surface area of the inside pipes on the target substrate is smaller than 20% of a projected surface area of the target substrate itself.  
   
   
       28 . A film forming system having functions for performing a reforming process of removing organic impurities contained in a thin film deposited on a target substrate and a crystallizing process of crystallizing the thin film, the system comprising: 
 an airtight common transfer chamber having therein a transfer mechanism configured to transfer the target substrate;    a first single-substrate-CVD apparatus connected to the common (transfer chamber and configured to deposit a first thin film in an amorphous state by CVD on the target substrate;    a reforming apparatus connected to the common transfer chamber and configured to reform the first thing film in an amorphous state by heating the target substrate to a temperature lower than acrstallizing temperature; 
 a second single-substrate-CVD apparatus connected to the common transfer chamber and configured to deposit a second thin film in an amorphous state by CVD on the target substrate, which has been processed by the reforming apparatus; and  
 a heat-processing apparatus connected to the common transfer chamber and configured to heat-process the target substrate, which has been processed by the second single-substrate-CVD apparatus,  
 wherein the heat-processing apparatus comprises  
 an airtight process chamber,  
 a worktable disposed within the process chamber having a top surface configured to place the target substrate thereon,  
 a supply section configured to supply a process gas containing oxygen atoms into the process chamber,  
 an exhaust section configured to exhaust the process chamber,  
 a heat configured to heat the target substrate through the top surface of the worktable,  
 a temperature controller configured to control the heater,  
 a transmission window larger than the target substrate, formed in a ceiling of the process chamber and facing the worktable, the transmission window consisting essentially of a material transparent to ultraviolet rays and infrared rays,  
 an ultraviolet lamp and an infrared lamp juxtaposed with each other above the transmission window, and  
 a substantially dome-shaped light reflector covering the ultraviolet lamp and the infrared lamp, and having a curvature to reflect mixed light rays substantially uniformly onto the top surface of the worktable, the mixed light rays comprising ultraviolet rays from the ultraviolet lamp and infrared rays from the infrared lamp,  
   wherein, in the heat-processing apparatus, the reforming process and the crystallizing process are performed substantially together or continuously, by supplying the process gas into the process chamber, while heating the target substrate by the heater and radiating the mixed light rays into the process chamber.