Multi-staged heating system for fabricating microelectronic devices

Abstract

A system is provided which is adapted to transport a fluid from a plurality of serially coupled tanks to a chamber configured to process microelectronic wafers. The system further includes a plurality of temperature controllers positioned such that the chamber and the tanks are characterized into at least three zones based upon the adaptations of the controllers to maintain the fluid within each zone within a distinct temperature range. A method is also provided which includes storing a fluid within a preliminary temperature range, transporting the fluid to an intermediate tank and controlling the fluid temperature within the intermediate tank to be within a transitional temperature range distinct from the preliminary temperature range. The method further includes delivering the fluid to a process chamber and controlling the fluid temperature within the process chamber to be within a process temperature range distinct from the preliminary and transitional temperature ranges.

1 . A system, comprising: 
 a chamber configured to process one or more wafers for the fabrication of microelectronic devices;    a plurality of reservoirs serially coupled to the chamber via a plurality of intervening pipes, wherein the system is adapted to transport a fluid used to process the wafers from the plurality of reservoirs to the chamber;    one or more devices adapted to maintain the fluid supplied to the chamber within a first temperature range; and    one or more additional devices adapted to maintain the fluid residing in a first set of the plurality of reservoirs within a second temperature range distinct from the first temperature range, wherein a second set of the plurality of reservoirs are used to maintain the fluid residing therein within a third temperature range distinct from the first and second temperature ranges.    
     
     
         2 . The system of  claim 1 , wherein the chamber is configured to conduct an electroless deposition process.  
     
     
         3 . The system of  claim 1 , wherein the system is further adapted to transport the fluid from the chamber to one or more of the plurality of reservoirs.  
     
     
         4 . The system of  claim 1 , wherein the system is further adapted to circulate the fluid between at least two of the plurality of reservoirs.  
     
     
         5 . The system of  claim 1 , wherein the first temperature range is higher than the second temperature range.  
     
     
         6 . The system of  claim 1 , wherein the second temperature range is higher than the third temperature range.  
     
     
         7 . The system of  claim 1 , wherein the first temperature range is lower than the second temperature range, and wherein the second temperature range is lower than the third temperature range.  
     
     
         8 . The system of  claim 1 , wherein the first temperature range comprises temperatures between approximately 42° C. and approximately 50° C.  
     
     
         9 . The system of  claim 1 , wherein the second temperature range comprises temperatures between approximately 70° C. and approximately 95° C.  
     
     
         10 . The system of  claim 1 , wherein the third temperature range comprises temperatures between approximately 95° C. and approximately 110° C.  
     
     
         11 . The system of  claim 1 , further comprising one or more different devices adapted to maintain the fluid residing in the second set of the plurality of reservoirs within the third temperature range.  
     
     
         12 . The system of  claim 1 , further comprising one or more additional process chambers coupled to at least one of the plurality of reservoirs.  
     
     
         13 . A system, comprising: 
 a chamber configured to process one or more wafers for the fabrication of microelectronic devices;    a plurality of tanks serially coupled to the chamber and adapted to store a fluid used to process the wafers; and    a plurality of temperature controllers positioned within the system such that the chamber and the plurality of tanks are characterized into at least three different zones based upon adaptations of the temperature controllers to maintain the fluid within distinct temperature ranges in the respective zones while processing the wafers.    
     
     
         14 . The system of  claim 13 , wherein the plurality of temperature controllers are positioned such that the at least three different zones are arranged in ascending order based upon their respective temperature ranges, and wherein the zone comprising the chamber has the highest temperature range.  
     
     
         15 . The system of  claim 13 , wherein the plurality of temperature controllers are positioned such that the at least three different zones are arranged in descending order based upon their respective temperature ranges, and wherein the zone comprising the chamber has the lowest temperature range.  
     
     
         16 . The system of  claim 13 , wherein one of the plurality of temperature controllers is arranged within the chamber.  
     
     
         17 . The system of  claim 13 , wherein one of the plurality of temperature controllers is coupled to a fluid inlet of the chamber.  
     
     
         18 . The system of  claim 13 , wherein one of the plurality of temperature controllers is coupled to one of a plurality of pipes configured to transport the fluid from the plurality of tanks to the chamber.  
     
     
         19 . The system of  claim 13 , wherein one of the plurality of temperature controllers is arranged within one of the plurality of tanks.  
     
     
         20 . The system of  claim 13 , wherein at least one of the plurality of temperature controllers comprises an infrared heater.  
     
     
         21 . A method, comprising: 
 storing a fluid used to process microelectronic topographies within a storage tank of a microelectronic fabrication apparatus within a preliminary temperature range;    transporting the fluid from the storage tank to an intermediate tank of the microelectronic fabrication apparatus;    controlling the temperature of the fluid within the intermediate tank to be within a transitional temperature range distinct from the preliminary temperature range;    delivering the fluid from the intermediate tank to a process chamber of the microelectronic fabrication apparatus; and    controlling the temperature of the fluid within the process chamber to be within a process temperature range distinct from the preliminary and transitional temperature ranges.    
     
     
         22 . The method of  claim 21 , wherein the step of transporting the fluid from the storage tank to the intermediate tank comprises circulating the fluid between the storage tank and intermediate tank.  
     
     
         23 . The method of  claim 21 , further comprising recirculating the fluid from the chamber to at least one of the intermediate and storage tanks.  
     
     
         24 . The method of  claim 21 , wherein the steps of controlling the temperature within the intermediate tank or process chamber comprises heating the fluid.