Electrical contact for high dielectric constant capacitors and method for fabricating the same

Abstract

An electrical contact includes a non-conductive spacer surrounding conductive plug material along the full height of the contact. The spacer inhibits oxide and other diffusion through the contact. In the illustrated embodiment, the contact includes metals or metal oxides which are resistant to oxidation, and additional conductive barrier layers. The contact is particularly useful in integrated circuits which include high dielectric constant materials.

1 . A semiconductor device comprising: 
 a memory device capable of storing information;    a transistor active area; and    an electrical contact providing electrical communication between the memory device and the transistor active area, the electrical contact comprising:    a conductive contact plug comprising a conductive material,    a first barrier liner around the conductive contact plug, the first barrier liner comprising a conductive material acting as a first barrier against corrosion for the contact plug,    a second barrier liner around the first barrier liner, the second barrier liner comprising an insulative material acting as another barrier against corrosion for the contact plug, the first and second barrier liners reducing corrosive aspects associated with fabrication of the memory device.    
   
   
       2 . The semiconductor device of  claim 1 , wherein the memory device comprises a high dielectric constant capacitor  
   
   
       3 . The semiconductor device of  claim 1 , further comprising a cap barrier liner between the contact plug and the memory device, the cap barrier liner comprising a conductive material acting as another barrier against corrosion for the contact plug.  
   
   
       4 . The semiconductor device of  claim 1 , further comprising a silicide layer between the contact plug and the transistor active area.  
   
   
       5 . The semiconductor device of  claim 1 , wherein the insulative material of the second barrier liner comprises silicon nitride.  
   
   
       6 . The semiconductor device of  claim 1 , further comprising at least one of a self aligned bit line and self aligned word line.  
   
   
       7 . A method of reducing corrosion of a conductive plug in a semiconductor memory device, the method comprising: 
 forming two barrier layers capable of double-wrapping a conductive plug to reduce corrosion thereon, one barrier layer comprising an insulative material and the other barrier layer comprising a conductive material;    forming the conductive plug within the two barrier layers, thereby forming an electrical contact including a double wrapped conductive plug;    forming a lower electrode of a high dielectric constant capacitor, the lower electrode electrically communicating with the electrical contact.    
   
   
       8 . The method  claim 7 , further comprising forming a upper barrier layer between the conductive plug and the lower electrode, the upper barrier layer comprising a conductive material acting as another barrier against corrosion for the conductive plug.  
   
   
       9 . The method of  claim 7 , wherein the insulative material comprises silicon nitride.  
   
   
       10 . The method of  claim 7 , further comprising forming at least one of a self aligned bit line and self aligned word line.  
   
   
       11 . An electrical contact between an upper circuit element and a lower circuit element, the upper circuit element formed in a highly oxidizing environment, the electrical contact comprising: 
 means for transferring electrical signals between a lower circuit element and an upper circuit element, the upper circuit element formed in a highly oxidizing environment and being capable of storing information;    conductive means for reducing corrosion of the means for transferring;    insulative means for reducing corrosion of the means for transferring;    wherein the conductive means and the insulative means surround the means for transferring to form a double wrapping thereof.    
   
   
       12 . The electrical contact of  claim 11 , wherein the conductive means comprises a first barrier layer around the means for transferring.  
   
   
       13 . The electrical contact of  claim 12 , wherein the conductive means comprises a seond barrier layer over the means for transferring.