Photoactive adhesion promoter

Abstract

An adhesion promoter to help reduce semiconductor process effects, such as undesired line edge roughness, insufficient lithographical resolution, and limited depth of focus problems associated with the removal of a photoresist layer. A photoactive adhesion promoter (PAG) is described which helps reduce these and other undesired effects associated with the removal of photoresist in a semiconductor manufacturing process.

1 - 19 . (canceled)  
     
     
         20 . An apparatus comprising: 
 means for applying an adhesion promoter to a semiconductor wafer, the adhesion promoter comprising a photoacid generator to generate an acid in response to being exposed to an incident radiation to enhance solubility of a Photoresist layer applied superjacent to the adhesion promoter;    means for applying a photoresist layer superjacent to the adhesion promoter: and    means for removing the photoresist layer.    
     
     
         21 . (canceled)  
     
     
         22 . The apparatus of  claim 20  wherein the photoactive adhesion promoter comprises a photobase generator to generate a base in response to being exposed to an incident radiation.  
     
     
         23 . The apparatus of  claim 22  wherein the photoactive adhesion promoter is to provide feature profile control of a semiconductor device.  
     
     
         24 . The apparatus of  claim 23  wherein the photoactive adhesion promoter comprises a photon harvesting group to receive the incident radiation and a chemical catalyst group to facilitate coupling between the photoactive adhesion promoter and a photoresist layer.  
     
     
         25 - 27 . (canceled)  
     
     
         28 . A system comprising: 
 a first device to apply an adhesion promoter to a semiconductor wafer, the adhesion promoter comprising a photoacid generator to generate an acid in response to being exposed to an incident radiation;    a second device to apply a photoresist layer superjacent to the adhesion promoter;    a third device to remove the photoresist layer.    
     
     
         29 . The system of  claim 28  wherein the adhesion promoter is to enhance solubility of a photoresist layer applied superjacent to the adhesion promoter.  
     
     
         30 . The system of  claim 29  further comprising a fourth device to apply a photobase generator to generate a base in response to being exposed to the incident radiation.  
     
     
         31 . The system of  claim 28  wherein the adhesion promoter is to provide feature profile control of a semiconductor device.  
     
     
         32 . The system of  claim 29  wherein the adhesion promoter comprises a photon harvesting group to receive the incident radiation and a chemical catalyst group to facilitate coupling between the adhesion promoter and a photoresist layer.