US2005013762A1PendingUtilityA1

Carbon nanotube manufacturing method

Priority: Jul 10, 2003Filed: Jul 7, 2004Published: Jan 20, 2005
Est. expiryJul 10, 2023(expired)· nominal 20-yr term from priority
D01F 9/1271B82Y 30/00D01F 9/1272D01F 9/1275D01F 9/1278D01F 9/1273
43
PatentIndex Score
0
Cited by
0
References
0
Claims

Abstract

In a carbon nanotube manufacturing method, a substrate made of a carbon-containing metal material is arranged in a reactor in which a carbon source gas has been introduced. A plurality of carbon nanotubes are grown at a first temperature by chemical vapor deposition. Thereafter, the substrate is heated at a second temperature lower than the first heating temperature to grow the plurality of carbon nanotubes longer on the substrate.

Claims

exact text as granted — not AI-modified
1 . A carbon nanotube manufacturing method of arranging a substrate made of a carbon-containing metal material in a reactor in which a carbon source gas has been introduced, and growing a plurality of carbon nanotubes at a first temperature by chemical vapor deposition, and 
 thereafter heating the substrate at a second temperature lower than the first heating temperature to grow the plurality of carbon nanotubes longer on the substrate.    
     
     
         2 . A method according to  claim 1 , wherein at least a surface of the substrate is made of a metal material containing any one of iron, nickel, cobalt, and chromium.  
     
     
         3 . A method according to  claim 1 , wherein the first temperature is 750° C. to 1,000° C., and the second temperature is 500° C. to 750° C.  
     
     
         4 . A method according to  claim 1 , wherein the carbon source gas is one gas selected from the group consisting of carbon monoxide, acetylene, ethylene, ethane, propylene, propane, and methane gases.

Join the waitlist — get patent alerts

Track US2005013762A1 — get alerts on status changes and closely related new filings.

We store only your email — no account needed. See our privacy policy.