Plasma etching apparatus and plasma etching method

Abstract

An apparatus for etching an organic film that is capable of suppressing the amount of contaminants adhered to the etched substrate without deteriorating the etching properties or processing profile of the film, comprising disposing a ring formed of a semiconductor material on the outer circumference of a substrate to be processed, and applying a bias voltage to the ring.

1 . A plasma etching apparatus for etching an organic film, comprising: 
 a semiconductor ring disposed on an outer circumference of a substrate to be processed, and having a bias voltage applied to the ring.    
   
   
       2 . The plasma etching apparatus according to  claim 1 , further comprising a resin layer formed of a carbon material disposed on an inner wall surface of a processing chamber.  
   
   
       3 . The plasma etching apparatus according to  claim 1 , wherein a carbon monoxide gas is added to an etching gas.  
   
   
       4 . The plasma etching apparatus according to  claim 1 , wherein a methane gas is added to an etching gas.  
   
   
       5 . The plasma etching apparatus according to  claim 1 , wherein at least either a material or a size of a susceptor member disposed between said ring and an electrode is adjusted according to an area to be etched on said substrate to be processed.  
   
   
       6 . A plasma etching method for etching an organic film, comprising: 
 disposing a semiconductor ring on an outer circumference of a substrate to be processed, applying a bias voltage to the ring, and controlling the bias voltage being applied, thereby controlling the degree of deposition of silicon-based reaction products on the surface of the ring.    
   
   
       7 . The plasma etching method according to  claim 6 , further comprising disposing a resin layer formed of a carbon material on an inner wall surface of a processing chamber.  
   
   
       8 . The plasma etching method according to  claim 6 , further comprising adding a gas containing carbon to an etching gas.