Controlling the temperature of a substrate in a film deposition apparatus

Abstract

A system and method for that allows one part of an atomic layer deposition (ALD) process sequence to occur at a first temperature while allowing another part of the ALD process sequence to occur at a second temperature. In such a fashion, the first temperature can be chosen to be lower such that decomposition or desorption of the adsorbed first reactant does not occur, and the second temperature can be chosen to be higher such that comparably greater deposition rate and film purity can be achieved. Additionally, the invention relates to improved temperature control in ALD to switch between these two thermal states in rapid succession. It is emphasized that this abstract is provided to comply with rules requiring an abstract. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.

1 - 15 . (Canceled)  
   
   
       16 . A method for affecting a temperature of a substrate on a pedestal in a film deposition apparatus comprising: 
 increasing a temperature of said substrate by irradiating said substrate with an energy source and having a heat transferring gas between said pedestal and said substrate at a low pressure; and    decreasing a temperature of said substrate by not having said energy source irradiating said substrate and having said heat transferring gas between said pedestal and said substrate at a high pressure.    
   
   
       17 . The method of  claim 16 , wherein said heat transferring gas is argon.  
   
   
       18 . The method of  claim 16 , wherein said heat transferring gas is helium.  
   
   
       19 . The method of  claim 16 , wherein said high pressure is between about 3 and 10 torr.  
   
   
       20 . The method of  claim 16 , wherein said high pressure is between about 3 and 20 torr.  
   
   
       21 . The method of  claim 16 , wherein said low pressure is less than 3 torr.  
   
   
       22 . The method of  claim 16 , wherein said low pressure is less than 1 torr.  
   
   
       23 . The method of  claim 16 , wherein said energy source is selected from a group consisting of a rapid thermal processor, a laser, an electron beam source, and an x-ray source.  
   
   
       24 . The method of  claim 16 , wherein said substrate temperature is additionally affected by resistively heating said pedestal.  
   
   
       25 . The method of  claim 16 , wherein said substrate temperature is additionally affected by flowing a chilled fluid through said pedestal.  
   
   
       26 - 51 . (Cancelled)