Gas delivery system for deposition processes, and methods of using same

Abstract

The present invention is generally directed to a novel gas delivery system for various deposition processes, and various methods of using same. In one illustrative embodiment, a deposition tool comprises a process chamber, a wafer stage adapted for holding a wafer positioned therein, and a gas delivery system positioned in the chamber above a position where a plasma will be generated in the chamber, wherein substantially all of a reactant gas is delivered into the chamber via the gas delivery system. In another illustrative embodiment, the reactant gas exiting the gas delivery system is directed so as to cover substantially all of an area defined by an upper surface of the wafer. In one illustrative embodiment, the method comprises positioning a wafer in a process chamber of a deposition tool, generating a plasma within the process chamber above the wafer, and forming a layer of material above the wafer by introducing substantially all of a reactant gas used to form the layer of material into the process chamber above the plasma via a gas delivery system positioned above the plasma. In another illustrative embodiment, the reactant gas exiting the gas delivery system is directed to cover substantially all of an area defined by an upper surface of the wafer.

1 - 96 . (Canceled)  
   
   
       97 . A method, comprising: 
 positioning a wafer in a process chamber of a deposition tool, said process chamber having a top surface and an RF coil positioned adjacent said top surface;    generating a plasma within said process chamber above said wafer by energizing at least said RF coil positioned adjacent said top surface, said plasma having a region wherein highest ionization occurs; and    forming a layer of material above said wafer by introducing substantially all of a reactant gas used to form said layer of material into said region of highest ionization via a gas delivery system positioned adjacent said top surface above said plasma.    
   
   
       98 . The method of  claim 97 , wherein generating a plasma within said process chamber above said wafer comprises generating a high density plasma within said process chamber above said wafer.  
   
   
       99 . The method of  claim 97 , wherein forming a layer of material above said wafer comprises forming a layer of material above said wafer and in a plurality of trenches formed in said wafer.  
   
   
       100 . The method of  claim 97 , wherein forming a layer of material above said wafer comprises forming a layer of silicon dioxide by introducing a reactant gas comprised of silane.  
   
   
       101 . The method of  claim 97 , wherein said gas delivery system is comprised of a generally circular body having a diameter that is at least approximately the same as a diameter of said wafer, at least one inlet nozzle, and a plurality of outlet nozzles formed in a bottom surface of said generally circular body.  
   
   
       102 . The method of  claim 97 , wherein said gas delivery system is comprised of a generally circular body and a plurality of outlet nozzles formed in a top surface of said body.  
   
   
       103 . The method of  claim 97 , wherein said gas delivery system is comprised of a generally circular body and a plurality of outlet nozzles formed in a side surface of said body.  
   
   
       104 . The method of  claim 97 , wherein said gas delivery system is comprised of a body having a plurality of angled outlets formed in an upper surface of said body.  
   
   
       105 . The method of  claim 104 , wherein said angled openings are positioned at an angle of approximately 45 degrees with respect to said upper surface of said body.  
   
   
       106 . The method of  claim 97 , wherein said gas delivery system is comprised of a manifold and a plurality of distribution pipes coupled to said manifold, each of said distribution pipes having a plurality of openings formed therein.  
   
   
       107 . The method of  claim 97 , wherein said gas delivery system is comprised of a structure having at least one gas inlet and a plurality of gas outlets.  
   
   
       108 . A method, comprising: 
 positioning a wafer in a process chamber of a deposition tool, said process chamber having a top surface and an RF coil positioned adjacent said top surface;    generating a plasma within said process chamber above said wafer by energizing at least said RF coil positioned adjacent said top surface; and    forming a layer of material above said wafer by introducing substantially all of a reactant gas used to form said layer of material into said process chamber from above said plasma via a gas delivery system positioned adjacent said top surface above said plasma.    
   
   
       109 . The method of  claim 108 , wherein generating a plasma within said process chamber above said wafer comprises generating a high density plasma within said process chamber above said wafer.  
   
   
       110 . The method of  claim 108 , wherein forming a layer of material above said wafer comprises forming a layer of material above said wafer and in a plurality of trenches formed in said wafer.  
   
   
       111 . The method of  claim 108 , wherein forming a layer of material above said wafer comprises forming a layer of silicon dioxide by introducing a reactant gas comprised of silane.  
   
   
       112 . The method of  claim 108 , wherein said gas delivery system is comprised of a generally circular body having a diameter that is at least approximately the same as a diameter of said wafer, at least one inlet nozzle, and a plurality of outlet nozzles formed in a bottom surface of said generally circular body.  
   
   
       113 . The method of  claim 108 , wherein said gas delivery system is comprised of a generally circular body and a plurality of outlet nozzles formed in a top surface of said body.  
   
   
       114 . The method of  claim 108 , wherein said gas delivery system is comprised of a generally circular body and a plurality of outlet nozzles formed in a side surface of said body.  
   
   
       115 . The method of  claim 108 , wherein said gas delivery system is comprised of a body having a plurality of angled outlets formed in an upper surface of said body.  
   
   
       116 . The method of  claim 115 , wherein said angled openings are positioned at an angle of approximately 45 degrees with respect to said upper surface of said body.  
   
   
       117 . The method of  claim 108 , wherein said gas delivery system is comprised of a manifold and a plurality of distribution pipes coupled to said manifold, each of said distribution pipes having a plurality of openings formed therein.  
   
   
       118 . The method of  claim 108 , wherein said gas delivery system is comprised of a structure having at least one gas inlet and a plurality of gas outlets.  
   
   
       119 . A method, comprising: 
 positioning a wafer in a process chamber of a deposition tool, said process chamber having a top surface and an RF coil positioned adjacent said top surface;    generating a plasma within said process chamber above said wafer by energizing at least said RF coil positioned adjacent said top surface; and    forming a layer of material above said wafer by introducing a reactant gas used to form said layer of material into said process chamber above said plasma via a gas delivery system adjacent said top surface positioned above said plasma, wherein said reactant gas exiting said gas delivery system is directed to cover substantially all of an area defined by an upper surface of said wafer.    
   
   
       120 . The method of  claim 119 , wherein generating a plasma within said process chamber above said wafer comprises generating a high density plasma within said process chamber above said wafer.  
   
   
       121 . The method of  claim 119 , wherein forming a layer of material above said wafer comprises forming a layer of material above said wafer and in a plurality of trenches formed in said wafer.  
   
   
       122 . The method of  claim 119 , wherein forming a layer of material above said wafer comprises forming a layer of silicon dioxide by introducing a reactant gas comprised of silane.  
   
   
       123 . The method of  claim 119 , wherein said gas delivery system is comprised of a generally circular body having a diameter that is at least approximately the same as a diameter of said wafer, at least one inlet nozzle, and a plurality of outlet nozzles formed in a bottom surface of said generally circular body.  
   
   
       124 . The method of  claim 123 , wherein said gas delivery system is comprised of a generally circular body and a plurality of outlet nozzles formed in a top surface of said body.  
   
   
       125 . The method of  claim 119 , wherein said gas delivery system is comprised of a generally circular body and a plurality of outlet nozzles formed in a side surface of said body.  
   
   
       126 . The method of  claim 119 , wherein said gas delivery system is comprised of a body having a plurality of angled outlets formed in an upper surface of said body.  
   
   
       127 . The method of  claim 126 , wherein said angled openings are positioned at an angle of approximately 45 degrees with respect to said upper surface of said body.  
   
   
       128 . The method of  claim 119 , wherein said gas delivery system is comprised of a manifold and a plurality of distribution pipes coupled to said manifold, each of said distribution pipes having a plurality of openings formed therein.  
   
   
       129 . The method of  claim 119 , wherein said gas delivery system is comprised of a structure having at least one gas inlet and a plurality of gas outlets.  
   
   
       130 . A method, comprising: 
 positioning a wafer in a process chamber of a deposition tool, said process chamber having a top surface and an RF coil positioned adjacent said top surface;    generating a plasma within said process chamber above said wafer by energizing at least said RF coil positioned adjacent said top surface; and    forming a layer of material above said wafer by introducing substantially all of a reactant gas used to form said layer of material into said process chamber from above said plasma via a gas delivery system positioned adjacent said top surface above said plasma, wherein said reactant gas exiting said gas delivery system is directed to cover substantially all of an area defined by an upper surface of said wafer.    
   
   
       131 . The method of  claim 130 , wherein generating a plasma within said process chamber above said wafer comprises generating a high density plasma within said process chamber above said wafer.  
   
   
       132 . The method of  claim 130 , wherein forming a layer of material above said wafer comprises forming a layer of material above said wafer and in a plurality of trenches formed in said wafer.  
   
   
       133 . The method of  claim 130 , wherein forming a layer of material above said wafer comprises forming a layer of silicon dioxide by introducing a reactant gas comprised of silane.  
   
   
       134 . The method of  claim 130 , wherein said gas delivery system is comprised of a generally circular body having a diameter that is at least approximately the same as a diameter of said wafer, at least one inlet nozzle, and a plurality of outlet nozzles formed in a bottom surface of said generally circular body.  
   
   
       135 . The method of  claim 130 , wherein said gas delivery system is comprised of a generally circular body and a plurality of outlet nozzles formed in a top surface of said body.  
   
   
       136 . The method of  claim 130 , wherein said gas delivery system is comprised of a generally circular body and a plurality of outlet nozzles formed in a side surface of said body.  
   
   
       137 . The method of  claim 130 , wherein said gas delivery system is comprised of a body having a plurality of angled outlets formed in an upper surface of said body.  
   
   
       138 . The method of  claim 137 , wherein said angled openings are positioned at an angle of approximately 45 degrees with respect to said upper surface of said body.  
   
   
       139 . The method of  claim 130 , wherein said gas delivery system is comprised of a manifold and a plurality of distribution pipes coupled to said manifold, each of said distribution pipes having a plurality of openings formed therein.  
   
   
       140 . The method of  claim 130 , wherein said gas delivery system is comprised of a structure having at least one gas inlet and a plurality of gas outlets.