Method for forming dielectric thin film and dielectric thin film formed thereby

Abstract

A method for forming a dielectric thin film includes a film deposition step of spraying a material solution onto a heated substrate under a reduced pressure by a two-fluid technique using an inert gas to deposit a thin film. The material solution is supplied at a rate that is greater than the vaporization rate of the solvent in the film deposited on the substrate. The supply of the material solution is stopped and the solvent remaining in the film is vaporized remaining solvent. Then, the film is heat-treated in an oxidizing atmosphere. The substrate is heated to a temperature in the range of about 100° C. to about 300° C. Thus, a dielectric thin film having reliability can be formed even if the film thickness is small.

1 - 8 . (canceled).  
   
   
       9 . A dielectric thin film formed by a method including a film deposition step of spraying a material solution including a starting material and a solvent onto a heated substrate under a pressure that is less than atmospheric pressure by a two-fluid technique using an inert gas to deposit a thin film, and a heat treatment step of subjecting the thin film to heat treatment in an oxidizing atmosphere, wherein the film deposition step and the heat treatment step are performed at least two times, the dielectric thin film having: 
 (a) crystallinity;    (b) a thickness of about 200 nm or less; and    (c) a relative dielectric constant of about 250 or more.    
   
   
       10 . A dielectric thin film according to  claim 9 , the dielectric thin film being formed by repeating at least once the film deposition and heat treatment steps.  
   
   
       11 - 19 . (canceled).  
   
   
       20 . A dielectric thin film formed by a method including a film deposition step of spraying a material solution including a starting material and a solvent onto a heated substrate under a pressure that is less than atmospheric pressure by a two-fluid technique using an inert gas to deposit a thin film, wherein the material solution is supplied at a greater rate than the vaporization rate of the solvent in the film deposited on the substrate, a solvent vaporization step of stopping the supply of the material solution and vaporizing the solvent remaining in the thin film, and a heat treatment step of subjecting the thin film to heat treatment in an oxidizing atmosphere, the heat treatment step being performed after the film deposition step and the solvent vaporization step are repeated at least once, the dielectric thin film having: 
 (a) crystallinity; and    (b) a relative dielectric constant of about 250 or more.    
   
   
       21 . A dielectric thin film according to  claim 20 , the dielectric thin film being formed by repeating at least once the film deposition and heat treatment steps.