Slurry for CMP, and method of manufacturing semiconductor device

Abstract

There is disclosed a CMP slurry which comprises a solvent, abrasive grains, and a silicone-based surfactant having an HLB value ranging from 7 to 20.

1 . A CMP slurry comprising: 
 a solvent;    abrasive grains; and    a silicone-based surfactant having an HLB value ranging from 7 to 20.    
   
   
       2 . The CMP slurry according to  claim 1 , wherein said silicone-based surfactant has an HLB value ranging from 10 to 17.  
   
   
       3 . The CMP slurry according to  claim 1 , wherein said silicone-based surfactant comprises at least one copolymer selected from the group consisting of polyoxyethylene/methylpolysiloxane copolymer, poly(oxyethylene/oxypropylene) methylpolysiloxane copolymer, polyoxyethylene alkyl polysiloxane/polyoxypropylene alkylpolysiloxane/dimethylpolysiloxane copolymer, and methylpolysiloxane/alkylmethylpolysiloxane/poly(oxyethylene/oxypropylene) methylpolysiloxane copolymer.  
   
   
       4 . The CMP slurry according to  claim 1 , wherein the content of said silicone-based surfactant is within the range of 0.001 wt % to 0.5 wt %.  
   
   
       5 . The CMP slurry according to  claim 1 , further comprising resin particles.  
   
   
       6 . The CMP slurry according to  claim 5 , wherein the content of said resin particles is within the range of 0.05 wt % to 1 wt %.  
   
   
       7 . The CMP slurry according to  claim 1 , further comprising at least one component selected from the group consisting of an oxidizing agent, a chelate complexing agent and a non-silicone-based surfactant.  
   
   
       8 - 20 . (Cancelled)  
   
   
       21 . The CMP slurry according to  claim 1 , wherein the silicone-based surfactant has a hydrophobic moiety and a hydrophilic moiety, the hydrophilic moiety comprising at least one selected from the group consisting of polyether, betain, sulfate, pyrrolidone, and quarternary salt.  
   
   
       22 . The CMP slurry according to  claim 1 , wherein the abrasive grains comprise at least one selected from the group consisting of colloidal silica, fumed silica, colloidal alumina, fumed alumina, ceria and titanium oxide.  
   
   
       23 . The CMP slurry according to  claim 1 , wherein the content of the abrasive grains is within the range of 0.1 wt % to 30 wt %.  
   
   
       24 . The CMP slurry according to  claim 5 , wherein the resin particles comprise at least one selected from the group consisting of methacrylic resin, phenol resin, urea resin, melamine resin, polystyrene resin, polyacetal resin, and polycarbonate resin.  
   
   
       25 . The CMP slurry according to  claim 5 , wherein the abrasive grains are flocculated or adsorbed onto the surface of the resin particles to form composite particles.  
   
   
       26 . The CMP slurry according to  claim 25 , wherein the resin particles have at least one functional group selected from the group consisting of an anionic functional group, cationic functional group, amphoteric functional group or nonionic functional group.  
   
   
       27 . The CMP slurry according to  claim 26 , wherein the functional group is selected from the group consisting of hydroxyl group, epoxy group, and carboxylic group.  
   
   
       28 . The CMP slurry according to  claim 7 , wherein the oxidizing agent comprises at least one selected from the group consisting of hydrogen peroxide, ammonium persulfate, potassium persulfate, ferric nitrate, and secondary ammonium cerium nitrate.  
   
   
       29 . The CMP slurry according to  claim 7 , wherein the content of the oxidizing agent is within the range of 0.1 to 5 wt %.  
   
   
       30 . The CMP slurry according to  claim 7 , wherein the chelate complexing agent comprises at least one selected from the group consisting of quinaldinic acid, quinolinic acid, nicotinic acid, picolinic acid, malonic acid, maleic acid, oxalic acid, succinic acid, citric acid, tartaric acid, malic acid, lactic acid, ammonia, ethylenediamine glycine, alanine, and tryptophan.  
   
   
       31 . The CMP slurry according to  claim 7 , wherein the content of the chelate complexing agent is within the range of 0.01 wt % to 1 wt %.  
   
   
       32 . The CMP slurry according to  claim 7 , wherein the non-silicone-based surfactant comprises at least one selected from the group consisting of anionic surfactants, cationic surfactants, and nonionic surfactants.  
   
   
       33 . The CMP slurry according to  claim 7 , wherein the content of the non-silicone-based surfactant is within the range of 0.001 wt % to 1 wt %.