Systems and methods for forming refractory metal oxide layers

Abstract

A method of forming (and apparatus for forming) refractory metal oxide layers, such as tantalum pentoxide layers, on substrates by using vapor deposition processes with refractory metal precursor compounds and ethers.

1 - 52 . (Canceled)  
   
   
       53 . A vapor deposition apparatus comprising: 
 a vapor deposition chamber having a substrate positioned therein; and    one or more vessels comprising one or more refractory metal precursor compounds of the formula MY n  (Formula I), wherein M is a refractory metal, each Y is independently a halogen atom, and n is an integer selected to match the valence of the metal M; and    one or more vessels comprising one or more ethers of the formula R 1 —O—R 2 , wherein R 1  and R 2  are each independently organic groups.    
   
   
       54 . The apparatus of  claim 53  wherein the substrate is a silicon wafer.  
   
   
       55 . The apparatus of  claim 53  further comprising one or more sources of an inert carrier gas for transferring the precursors to the vapor deposition chamber.  
   
   
       56 . The apparatus of  claim 53  further comprising one or more vessels comprising one or more metal-containing precursor compounds having a formula different than Formula I.  
   
   
       57 . A vapor deposition apparatus comprising: 
 a vapor deposition chamber; and    one or more vessels comprising one or more refractory metal precursor compounds of the formula MY n  (Formula I), wherein M is a refractory metal, each Y is independently a halogen atom, and n is an integer selected to match the valence of the metal M; and    one or more vessels comprising one or more ethers of the formula R 1 —O—R 2 , wherein R 1  and R 2  are each independently organic groups.    
   
   
       58 . The apparatus of  claim 57  wherein M is tantalum and n is 5.  
   
   
       59 . The apparatus of  claim 57  wherein Y is independently selected from the group consisting of F, Cl, I, and combinations thereof.  
   
   
       60 . The apparatus of  claim 59  wherein each Y is independently a fluorine atom.  
   
   
       61 . The apparatus of  claim 60  wherein M is tantalum and n is 5.  
   
   
       62 . The apparatus of  claim 57  wherein at least one of R 1  and R 2  is selected from the group consisting of alkyl groups, alkenyl groups, aryl groups, silyl groups, and combinations thereof.  
   
   
       63 . The apparatus of  claim 57  wherein at least one of R 1  and R 2  contains one or more functional groups selected from the group consisting of ether, amino, and carbonyl groups.  
   
   
       64 . The apparatus of  claim 57  wherein at least one of R 1  and R 2  is an alkyl group that forms a stable radical or carbocation.  
   
   
       65 . The apparatus of  claim 57  wherein at least one of R 1  and R 2  is selected from the group consisting of benzyl, t-butyl, dimethylsilyl, and trimethylsilyl groups.  
   
   
       66 . The apparatus of  claim 65  wherein at least one of R 1  and R 2  is selected from the group consisting of dimethylsilyl and trimethylsilyl groups.  
   
   
       67 . The apparatus of  claim 57  further comprising one or more vessels comprising one or more metal-containing precursor compounds having a formula different than Formula I.  
   
   
       68 . The apparatus of  claim 57  wherein R 1 —O—R 2  is hexamethyldisiloxane.  
   
   
       69 . The apparatus of  claim 57  wherein R 1 —O—R 2  is tetramethyldisiloxane.  
   
   
       70 . A vapor deposition apparatus comprising: 
 a vapor deposition chamber; and    one or more vessels comprising one or more refractory metal precursor compounds of the formula MY n  (Formula I), wherein M is a refractory metal, each Y is independently a halogen atom, and n is an integer selected to match the valence of the metal M; and    one or more vessels comprising one or more ethers of the formula R 1 —O—R 2 , wherein R 1  and R 2  are each independently organic groups, with the proviso that at least one of the one or more ethers comprises tetramethyldisiloxane.    
   
   
       71 . A vapor deposition apparatus comprising: 
 a vapor deposition chamber; and    one or more vessels comprising one or more refractory metal precursor compounds of the formula MY n  (Formula I), wherein M is a refractory metal, each Y is independently a halogen atom, and n is an integer selected to match the valence of the metal M; and    one or more vessels comprising one or more ethers of the formula R 1 —O—R 2 , wherein R 1  and R 2  are each independently organic groups, with the proviso that the one or more ethers do not comprise disilyl ethers.