Liquid crystal display device and fabrication method thereof

Abstract

The present invention provides a novel photolithography processes using photoresist pattern having at least two areas which has different thickness from each other for a fabrication method for a liquid crystal display device having reversed staggered and channel-etched type thin film transistors, reduce a number of photolithography processes required for whole of the fabrication process of the liquid crystal display device, and improve brightness of the liquid crystal display device.

1 . A liquid crystal display device comprising: 
 a pair of substrates;    a liquid crystal layer interposed between said pair of substrates;    a plurality of drain wiring lines and a plurality of gate wiring lines being formed one of said pair of substrates;    at least one pixel is composed in respective regions surrounded by said drain wiring lines and said gate wiring lines;    a lower electrode, a dielectric film, a protective film, and an upper electrode being formed at location corresponding to said at least one pixel in this order;    a semiconductor layer formed between said dielectric film and said protective film;    a contact hole is provided by perforating said protective film, and    said upper electrode contacts with said semiconductor layer through said contact hole.    
   
   
       2 . A liquid crystal display device according to  claim 1 , 
 wherein said upper electrode is a transparent electrode.    
   
   
       3 . A liquid crystal display device according to  claim 1 , 
 wherein at least one transistor is formed in said one pixel.    
   
   
       4 . A liquid crystal display device according to  claim 3 , 
 wherein said upper electrode is electrically connected to said transistor.    
   
   
       5 . A liquid crystal display device according to  claim 3 , 
 wherein said dielectric film is a gate insulating layer of said transistor.    
   
   
       6 . A liquid crystal display device according to  claim 3 , 
 wherein said lower electrode is composed of the same material as a gate electrode of said transistor.