Structure comprising an interlayer of palladium and/or platinum and method for fabrication thereof

Abstract

An interconnection structure comprising a substrate having a dielectric layer with a via opening therein; a barrier layer located in the via opening; an interlayer of palladium and/or platinum on the barrier layer; and a layer of copper or copper alloy on the interlayer is provided.

1 . An electronic structure comprising: 
 a substrate having a dielectric layer having a via opening therein; the via opening having sidewalls and bottom surfaces of the via opening;    an interlayer of a member selected from the group consisting of palladium, platinum and mixtures thereof; and    copper or copper alloy located on the interlayer.    
   
   
       2 . The electronic structure of  claim 1  wherein said interlayer is palladium.  
   
   
       3 . The electronic structure of  claim 1  wherein said interlayer is platinum.  
   
   
       4 . The electronic structure of  claim 1  wherein the interlayer is about 50 to about 500 Angstroms thick.  
   
   
       5 . The electronic structure of  claim 1  wherein the interlayer is about 50 to about 100 Angstroms thick.  
   
   
       6 . The structure of  claim 1  wherein the dielectric layer comprises silicon dioxide.  
   
   
       7 . The structure of  claim 1  wherein the via opening is about 100 to about 500 nanometers thick.  
   
   
       8 . The structure of  claim 1  wherein the barrier layer is about 5 to about 200 nanometers thick.  
   
   
       9 . The structure of  claim 1  wherein the barrier layer is selected from the group consisting of tungsten, alloys of tungsten, titanium, alloys of titanium, titanium nitride, tantalum, tantalum nitride and tantalum silicon nitride.  
   
   
       10 . The structure of  claim 1  which further comprises a copper seed layer on said interlayer intermediate said copper or copper alloy.  
   
   
       11 - 26 . (canceled)  
   
   
       27 . A structure obtained by a method which comprises forming an insulating material on a substrate; lithographically defining and forming recesses for lines and/or via in the insulating material in which interconnection conductor material will be deposited: 
 depositing in the recesses a barrier layer;    depositing an interlayer of a member selected from the group consisting of palladium, platinum, and mixtures thereof, and    depositing copper or a copper alloy on the interlayer to fill the recesses.