US2005006728A1PendingUtilityA1

Semiconductor device and method of manufacturing the same

43
Priority: Jul 10, 2003Filed: Dec 9, 2003Published: Jan 13, 2005
Est. expiryJul 10, 2023(expired)· nominal 20-yr term from priority
Inventors:Yoshinori Shizuno
H10P 72/7422H10P 72/7416H10P 74/277H10P 72/7402H10P 54/00H10P 72/74H10D 86/03
43
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Claims

Abstract

A semiconductor device includes a substrate, a seal layer which seals a semiconductor element formed on the substrate, wherein a side surface of the seal layer is positioned inside of a side surface of the substrate.

Claims

exact text as granted — not AI-modified
1 . A semiconductor device comprising: 
 a substrate;    a seal layer which seals a semiconductor element formed on the substrate,    wherein a side surface of the seal layer is positioned inside of a side surface of the substrate.    
     
     
         2 . The semiconductor device according to  claim 1 , wherein the side surface of the seal layer has a cut cross-section formed by grinding, and the side surface of the substrate has a cut cross-section formed by applying laser light to the substrate.  
     
     
         3 . The semiconductor device according to  claim 1 , wherein the side surface of the seal layer is positioned inside of the side surface of the substrate within a range of 5 μm to 100 μm.  
     
     
         4 . The semiconductor device according to  claim 1 , wherein the substrate is a silicon substrate or a sapphire substrate whose surface is formed with a silicon thin film.  
     
     
         5 . A semiconductor device comprising: 
 a substrate;    a sealing resin sealing a semiconductor element formed on the substrate,    wherein a side surface of the sealing resin is positioned inside of a side surface of the substrate.    
     
     
         6 . The semiconductor device according to  claim 5 , wherein the side surface of the sealing resin has a cut cross-section formed by grinding, and the side surface of the substrate has a cut cross-section formed by applying laser light to the substrate.  
     
     
         7 . The semiconductor device according to  claim 5 , wherein the side surface of the sealing resin is positioned inside of the side surface of the substrate within a range of 5 μm to 100 μm.  
     
     
         8 . The semiconductor device according to  claim 5 , wherein the substrate is a silicon substrate or a sapphire substrate whose surface is formed with a silicon thin film.  
     
     
         9 . A semiconductor device comprising: 
 a substrate which has a main surface formed with a circuit element;    a wiring which is formed over the main surface and which is electrically connected to the circuit element;    a sealing resin which covers the main surface of the substrate and the wiring; and    an external terminal which is electrically connected to the wiring and which is exposed from a surface of the sealing resin,    wherein an edge of the sealing resin is formed inside an edge of the substrate.    
     
     
         10 . The semiconductor device according to  claim 9 , wherein a side surface of the sealing resin has a cut cross-section formed by grinding, and a side surface of the substrate has a cut cross-section formed by applying laser light to the substrate.  
     
     
         11 . The semiconductor device according to  claim 9 , wherein the side surface of the sealing resin is positioned inside of a side surface of the substrate within a range of 5 μm to 100 μm.  
     
     
         12 . The semiconductor device according to  claim 9 , wherein the substrate is a silicon substrate or a sapphire substrate whose surface is formed with a silicon thin film.

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