US2005006647A1PendingUtilityA1

Thin film circuit device, manufacturing method thereof, electro-optical apparatus, and electronic system

Assignee: SEIKO EPSON CORPPriority: May 22, 2003Filed: May 21, 2004Published: Jan 13, 2005
Est. expiryMay 22, 2023(expired)· nominal 20-yr term from priority
H10P 72/7432H10W 90/732H10W 72/07304H10D 86/441H10D 86/60H10D 86/0214G02F 1/136
43
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Claims

Abstract

To provide a thin film circuit device in which a three-dimensional circuit structure is realized, a thin film circuit device is formed of a first thin film circuit layer and a second thin film circuit layer laminated to each other. The first thin film circuit layer contains a first thin film circuit provided between an underlayer and a protective layer and a lower connection electrode connected to the first thin film circuit and exposed at a part of the bottom surface of the underlayer. The second thin film circuit layer contains a second thin film circuit provided between an underlayer and a protective layer, an upper connection electrode connected to the second thin film circuit and exposed at a part of the top surface of the protective layer, and a lower connection electrode connected to the second thin film circuit and exposed at a part of the bottom surface of the underlayer. The first and the second thin film circuits are bonded to each other so that the lower connection electrode of the first thin film circuit layer is electrically connected to the upper electrode of the second thin film circuit layer.

Claims

exact text as granted — not AI-modified
1 . A thin film circuit device, comprising: 
 an underlayer;    a thin film circuit layer formed on the underlayer and functioning as an electrical circuit; and    a connection electrode which penetrates a part of the underlayer so as to be exposed approximately flush with a surface of the underlayer at a side opposite to the thin film circuit layer and which connects the thin film circuit layer to an exterior circuit.    
   
   
       2 . The thin film circuit device according to  claim 1 , further comprising: 
 a first protective layer covering at least a part of the thin film circuit layer for protection; and    a connection electrode which penetrates a part of the first protective layer so as to be exposed approximately flush with a surface of the first protective layer at the side opposite to the thin film circuit layer and which connects the thin film circuit layer to an exterior circuit.    
   
   
       3 . A thin film circuit device, comprising: 
 a heat resistant first substrate;    a peeling layer which is formed on the first substrate and which is to be peeled away by energy applied thereto;    an insulating underlayer formed on the peeling layer;    a thin film circuit layer formed on the underlayer;    a first protective layer formed on the thin film circuit layer; and    a connection electrode which penetrates a part of the underlayer to be in contact with the peeling layer and which is to be exposed to connect the thin film circuit layer to an exterior circuit when the peeling layer is removed away.    
   
   
       4 . The thin film circuit device according to  claim 3 , further comprising: 
 a second protective layer between the peeling layer and the underlayer.    
   
   
       5 . A thin film circuit device, comprising: 
 a first thin film circuit layer having a first thin film circuit formed between an underlayer and a first protective layer and a lower connection electrode connected to the first thin film circuit and exposed at a part of the bottom surface of the underlayer; and    a second thin film circuit layer having a second thin film circuit formed between an underlayer and a first protective layer, an upper connection electrode connected to the second thin film circuit and exposed at a part of the top surface of the first protective layer, and a lower connection electrode connected to the second thin film circuit and exposed at a part of the bottom surface of the underlayer,    the first thin film circuit layer and the second thin film circuit layer being laminated to each other, and    the lower connection electrode of the first thin film circuit layer being connected to the upper connection electrode of the second thin film circuit layer.    
   
   
       6 . The thin film circuit device according to  claim 5 , the lower connection electrode and the upper connection electrode being connected to each other with an anisotropic conductive material or a conductive adhesive.  
   
   
       7 . An electro-optical apparatus, comprising: 
 the thin film circuit device according to  claim 1 .    
   
   
       8 . An electronic system, comprising: 
 the electro-optical apparatus according to  claim 7 .    
   
   
       9 . A method to manufacture a thin film circuit device, comprising: 
 forming a first thin film circuit layer above a first circuit-forming substrate with a peeling layer provided therebetween, the first thin film circuit layer having one connection electrode on at least a surface thereof;    forming a second thin film circuit layer above a second circuit-forming substrate with a peeling layer provided therebetween, the second thin film circuit layer having connection electrodes on one surface and another surface thereof;    peeling the first thin film circuit layer from the first circuit-forming substrate so that the first thin film circuit layer is transferred to a transfer substrate;    bonding the second thin film circuit layer to the first thin film circuit layer transferred to the transfer substrate so that one of said connection electrodes of the second thin film circuit layer overlaps the connection electrode of the first thin film circuit layer; and    peeling the second thin film circuit layer from the second circuit-forming substrate so that the second thin film circuit layer is transferred to the first thin film circuit layer to form a laminate.    
   
   
       10 . The method to manufacture a thin film circuit device, according to  claim 9 , further comprising forming at least one of the first thin film circuit layer and the second thin film circuit layer by: 
 forming an underlayer on the peeling layer provided on the circuit-forming substrate;    forming a thin film circuit on the underlayer;    forming a contact hole penetrating a part of the underlayer to expose the peeling layer;    forming an electrode wire between the contact hole and the thin film circuit; and    forming a first protective layer on the thin film circuit and the electrode wire.    
   
   
       11 . The method to manufacturing a thin film circuit device, according to  claim 9 , further comprising: 
 forming a second protective layer between the peeling layer and the thin film circuit layer; and    removing the second protective layer after the thin film circuit layer is peeled away to transfer.

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