Slurry for CMP, polishing method and method of manufacturing semiconductor device

Abstract

There is disclosed a CMP slurry comprising composite type particles composed of a resin component and an inorganic component, which are complexed with each other, and resin particles, the CMP slurry having a viscosity of less than 10 mPas.

1 . A CMP slurry comprising: 
 composite type particles comprising a resin component and an inorganic component, which are complexed with each other; and    resin particles,    the CMP slurry having a viscosity of less than 10 mPas.    
     
     
         2 . The CMP slurry according to  claim 1 , wherein the composite type particles and the resin particles are of the same polarity.  
     
     
         3 . The CMP slurry according to  claim 1 , wherein either one of the composite type particles and the resin particles is maintained at an isoelectric point.  
     
     
         4 . The CMP slurry according to  claim 1 , wherein a ratio in particle diameter (d 1 /d 2 ) between an average particle diameter d 1  of the composite type particles and an average particle diameter d 2  of the resin particles is 2 or more.  
     
     
         5 . The CMP slurry according to  claim 1 , wherein a content of the resin particles is within the range of 10 wt % to 90 wt % based on a total weight of the composite type particles and the resin particles.  
     
     
         6 . The CMP slurry according to  claim 1 , wherein the resin component is selected from the group consisting of polymethyl methacrylate and polystyrene.  
     
     
         7 . The CMP slurry according to  claim 1 , wherein the resin particles are provided on the surface thereof with a hydrophilic group.  
     
     
         8 . A polishing method comprising: 
 contacting a polishing surface of the semiconductor substrate with a polishing pad attached to a turntable; and    dropping a CMP slurry onto the polishing pad to polish the polishing surface of the semiconductor substrate, the CMP slurry having a viscosity of less than 10 mPas and comprising composite type particles composed of a resin component and an inorganic component, which are complexed with each other, and resin particles.    
     
     
         9 . The polishing method according to  claim 8 , wherein the composite type particles and the resin particles in the CMP slurry are of the same polarity.  
     
     
         10 . The polishing method according to  claim 8 , wherein either one of the composite type particles and the resin particles in the CMP slurry is maintained at an isoelectric point.  
     
     
         11 . The polishing method according to  claim 8 , wherein a ratio in particle diameter (dl/d 2 ) between an average particle diameter d 1  of the composite type particles and an average particle diameter d 2  of the resin particles in the CMP slurry is 2 or more.  
     
     
         12 . The polishing method according to  claim 8 , wherein a content of the resin particles is within the range of 10 wt % to 90 wt % based on a total weight of the composite type particles and the resin particles in the CMP slurry.  
     
     
         13 . The polishing method according to  claim 8 , wherein the semiconductor substrate is retained in a retainer ring, and the polishing surface is positioned over an end face of the retainer ring.  
     
     
         14 . The polishing method according to  claim 8 , wherein the composite type particles and the resin particles are fixed to the polishing pad prior to the polishing of the polishing surface.  
     
     
         15 . A method of manufacturing a semiconductor device comprising: 
 forming an insulating film above a semiconductor substrate;    forming a recessed portion in the insulating film;    depositing a conductive material inside the recessed portion and on the insulating film to form a conductive layer; and    removing the conductive material deposited on the insulating film by CMP using a CMP slurry to expose the surface of the insulating film while selectively leaving the conductive material in the recessed portion, the CMP slurry having a viscosity of less than 10 mPas and comprising composite type particles composed of a resin component and an inorganic component, which are complexed with each other, and resin particles.    
     
     
         16 . The method according to  claim 15 , wherein the composite type particles and the resin particles in the CMP slurry are of the same polarity.  
     
     
         17 . The method according to  claim 15 , wherein either one of the composite type particles and the resin particles in the CMP slurry is maintained at an isoelectric point.  
     
     
         18 . The method according to  claim 15 , wherein a ratio in particle diameter (d 1 /d 2 ) between an average particle diameter d 1  of the composite type particles and an average particle diameter d 2  of the resin particles in the CMP slurry is 2 or more.  
     
     
         19 . The method according to  claim 15 , wherein a content of the resin particles is within the range of 10 wt % to 90 wt % based on a total weight of the composite type particles and the resin particles in the CMP slurry.  
     
     
         20 . The method according to  claim 15 , wherein the conductive material includes a Cu film deposited through a TaN film.