Method of creating a high performance organic semiconductor device

Abstract

A high temperature thermal annealing process creates a low resistance contact between a metal material and an organic material of an organic semiconductor device, which improves the efficiency of carrier injection. The process forms ohmic contacts and Schottky contacts. Additionally, the process may cause metal ions or atoms to migrate or diffuse into the organic material, cause the organic material to crystallize, or both. The resulting organic semiconductor device has enhanced operating characteristics such as faster speeds of operation. Instead of using heat, the process may use other forms of energy, such as voltage, current, electromagnetic radiation energy for localized heating, infrared energy and ultraviolet energy. An example enhanced organic diode comprising aluminum, carbon C 60 , and copper is described, as well as example insulated gate field effect transistors.

1 - 60 . (Canceled)  
     
     
         61 . A method of creating a high performance insulated gate field effect transistor, the method comprising: 
 providing the insulated gate field effect transistor, the insulated gate field effect transistor comprising a substrate, an organic semiconductor formed on the substrate, an insulator formed on the organic semiconductor, a source formed on the organic semiconductor, a gate formed on the insulator, and drain formed on the organic semiconductor; and    subjecting the source to energy sufficient to create an ohmic contact between the source and the organic semiconductor.    
     
     
         62 . The method of  claim 61  wherein the step of providing an insulated gate field effect transistor further comprises: 
 providing the substrate;    forming the organic semiconductor on the substrate;    forming the insulator on the organic semiconductor;    forming the source on the organic semiconductor;    forming the gate on the insulator; and    forming the drain on the organic semiconductor.    
     
     
         63 . The method of  claim 61  wherein the organic semiconductor includes an organic material, the organic material including a fullerene.  
     
     
         64 . The method of  claim 63  wherein the organic material comprises a member of the C 60  family.  
     
     
         65 . The method of  claim 63  wherein the organic material comprises a member of the C 70  family.  
     
     
         66 . The method of  claim 63  wherein the organic material comprises a member of the C 80  family.  
     
     
         67 . The method of  claim 61  wherein the gate includes a metal.  
     
     
         68 . The method of  claim 67  wherein the gate includes aluminum or gold.  
     
     
         69 . The method of  claim 61  wherein the drain includes a metal.  
     
     
         70 . The method of  claim 69  wherein the drain includes copper.  
     
     
         71 . The method of  claim 61  wherein the source includes a metal.  
     
     
         72 . The method of  claim 71  wherein the source includes copper.  
     
     
         73 . The method of  claim 71  wherein the metal of the source is diffused into the organic semiconductor to form a low resistance contact between the source and the organic semiconductor.  
     
     
         74 . The method of  claim 69  wherein the metal of the drain is diffused into the organic semiconductor to form a low resistance contact between the drain and the organic semiconductor.  
     
     
         75 . The method of  claim 61  wherein the source is diffused into the organic semiconductor.  
     
     
         76 . The method of  claim 61  wherein the drain is diffused into the organic semiconductor.  
     
     
         77 . A method for creating a high performance insulated gate field effect transistor, comprising the steps of: 
 providing the insulated gate field effect transistor, the insulated gate field effect transistor comprising a substrate, an organic semiconductor formed on the substrate, an insulator formed on the organic semiconductor, a source formed on the organic semiconductor, a gate formed on the insulator, and a drain formed on the organic semiconductor;    subjecting the source to energy sufficient to create an ohmic contact between the source and the organic semiconductor; and    diffusing the source into the organic semiconductor.    
     
     
         78 . The method of  claim 77  wherein the step of providing an insulated gate field effect transistor further comprises the steps of: 
 forming the organic semiconductor on the substrate;    forming the insulator on the organic semiconductor;    forming the source on the organic semiconductor;    forming the gate on the insulator; and    forming the drain on the organic semiconductor.    
     
     
         79 . The method of  claim 77  wherein the organic semiconductor includes an organic material, comprising a fullerene.  
     
     
         80 . The method of  claim 79  wherein the organic material comprises a member of the C 60  family.  
     
     
         81 . The method of  claim 79  wherein the organic material comprises a member of the C 70  family.  
     
     
         82 . The method of  claim 79  wherein the organic material comprises a member of the C 80  family.  
     
     
         83 . The method of  claim 77  wherein the gate includes a metal.  
     
     
         84 . The method of  claim 83  wherein the metal comprises aluminum or gold.  
     
     
         85 . The method of  claim 77  wherein the drain includes a metal.  
     
     
         86 . The method of  claim 85  wherein the metal comprises copper.  
     
     
         87 . The method of  claim 85  wherein the metal of the drain is diffused into the organic semiconductor to form a low resistance contact between the drain and the organic semiconductor.  
     
     
         88 . The method of  claim 77  wherein the drain is diffused into the organic semiconductor.  
     
     
         89 . The method of  claim 77  wherein the source includes a metal.  
     
     
         90 . The method of  claim 89  wherein the metal comprises copper.  
     
     
         91 . The method of  claim 89  wherein the metal of the source is diffused into the organic semiconductor to form a low resistance contact between the source and the organic semiconductor.  
     
     
         92 . A method for creating a high performance insulated gate field effect transistor, comprising the steps of: 
 providing the insulated gate field effect transistor, the insulated gate field effect transistor comprising a substrate, an organic semiconductor formed on the substrate, an insulator formed on the organic semiconductor, a metal source formed on the organic semiconductor, a gate formed on the insulator, and a metal drain formed on the organic semiconductor;    subjecting the source and the drain to energy sufficient to create low resistance ohmic contacts between the organic semiconductor and, respectively, the source and the drain; and    diffusing the metal source and the metal drain into the organic semiconductor.    
     
     
         93 . The method of  claim 92  wherein the step of providing an insulated gate field effect transistor, further comprising the steps of: 
 forming the organic semiconductor on the substrate;    forming the insulator on the organic semiconductor;    forming the source on the organic semiconductor;    forming the gate on the insulator; and    forming the drain on the organic semiconductor.    
     
     
         94 . The method of  claim 92  wherein the organic semiconductor includes an organic material comprising a fullerene.  
     
     
         95 . The method of  claim 94  wherein the organic material comprises a member of the C 60  family.  
     
     
         96 . The method of  claim 94  wherein the organic material comprises a member of the C 70  family.  
     
     
         97 . The method of  claim 94  wherein the organic material comprises a member of the C 80  family.  
     
     
         98 . The method of  claim 92  wherein the gate includes a metal.  
     
     
         99 . The method of  claim 98  wherein the metal is comprised of aluminum or gold.  
     
     
         100 . The method of  claim 92  wherein the metal drain is comprised of copper.  
     
     
         101 . The method of  claim 92  wherein the metal source is comprised of copper.