Method of manufacturing ceramic resistor

Abstract

A method for manufacturing a ceramic resistor wherein the resisting material of the resistor is a ceramic material prepared by a method comprising the steps of providing four or more types of substance, compound, or composite as starting raw materials, admixing the starting raw materials, forming the resultant mixture, and firing the formed material, characterized in that the admixing step is carried out in a mixing vessel ( 1 ) by the use of a first agitating blade ( 2 ) as a means for allowing the starting materials to flow over the whole mixing vessel and a second agitating blade ( 3 ) as a means for diaggregating the aggregates of the starting materials. The method can be employed for suppressing the variation of resistance values.

1 - 13 . (Cancelled)  
     
     
         14 . A ceramic resistor comprising a ceramic acting as a resistor material comprising a compound and/or a complex compound which contains at least four metallic and/or metalloid elements.  
     
     
         15 . The ceramic resistor of  claim 14 , wherein the specific resistance of the resistor material is 1 kΩ·cm or less, and 
 wherein the temperature coefficient of resistance of the ceramic resistor is −1150 ppm/° C. or more.    
     
     
         16 . The ceramic resistor of  claim 14 , wherein the specific resistance of the resistor material is in the range of 1 to 8 kΩ·cm, and 
 wherein the temperature coefficient of resistance of the ceramic resistor is −1300 ppm/° C. or more.    
     
     
         17 . The ceramic resistor of  claim 14 , wherein the specific resistance of the resistor material is in the range of 8 to 30 kΩ·cm, and 
 wherein the temperature coefficient of resistance of the ceramic resistor is −1450 ppm/° C. or more.    
     
     
         18 . The ceramic resistor of  claim 14 , wherein the specific resistance of the resistor material is in the range of 30 to 70 kΩ·cm, and 
 wherein the temperature coefficient of resistance of the ceramic resistor is −1530 ppm/° C. or more.    
     
     
         19 . The ceramic resistor of  claim 14 , wherein the specific resistance of the resistor material is 70 kΩ·cm or more, and 
 wherein the temperature coefficient of resistance of the ceramic resistor is −1620 ppm/° C. or more.    
     
     
         20 . The ceramic resistor according to  claim 15 , wherein the resistor material comprises a compound and/or a complex compound which contain Mg and Si.  
     
     
         21 . The ceramic resistor according to  claim 16 , wherein the resistor material comprises a compound and/or a complex compound which contain Mg and Si.  
     
     
         22 . The ceramic resistor according to  claim 17 , wherein the resistor material comprises a compound and/or a complex compound which contain Mg and Si.  
     
     
         23 . The ceramic resistor according to  claim 18 , wherein the resistor material comprises a compound and/or a complex compound which contain Mg and Si.  
     
     
         24 . The ceramic resistor according to  claim 19 , wherein the resistor material comprises a compound and/or a complex compound which contain Mg and Si.  
     
     
         25 . The ceramic resistor according to  claim 15 , wherein the ceramic acting as the resistor material comprises a compound and/or a complex compound which mainly contains Mg; Si; at least one element selected from the group consisting of Ca, Zn, Sr, Cd, and Ba; at least one element selected from the group consisting of Sn, Al, Sb, Ga, Pb, Cr, Mn, and Ge; and at least one element selected from the group consisting of Bi, Nb, Ta, V, W, and Mo.  
     
     
         26 . The ceramic resistor according to  claim 16 , wherein the ceramic acting as the resistor material comprises a compound and/or a complex compound which mainly contains Mg; Si; at least one element selected from the group consisting of Ca, Zn, Sr, Cd, and Ba; at least one element selected from the group consisting of Sn, Al, Sb, Ga, Pb, Cr, Mn, and Ge; and at least one element selected from the group consisting of Bi, Nb, Ta, V, W, and Mo.  
     
     
         27 . The ceramic resistor according to  claim 17 , wherein the ceramic acting as the resistor material comprises a compound and/or a complex compound which mainly contains Mg; Si; at least one element selected from the group consisting of Ca, Zn, Sr, Cd, and Ba; at least one element selected from the group consisting of Sn, Al, Sb, Ga, Pb, Cr, Mn, and Ge; and at least one element selected from the group consisting of Bi, Nb, Ta, V, W, and Mo.  
     
     
         28 . The ceramic resistor according to  claim 18 , wherein the ceramic acting as the resistor material comprises a compound and/or a complex compound which mainly contains Mg; Si; at least one element selected from the group consisting of Ca, Zn, Sr, Cd, and Ba; at least one element selected from the group consisting of Sn, Al, Sb, Ga, Pb, Cr, Mn, and Ge; and at least one element selected from the group consisting of Bi, Nb, Ta, V, W, and Mo.  
     
     
         29 . The ceramic resistor according to  claim 19 , wherein the ceramic acting as the resistor material comprises a compound and/or a complex compound which mainly contains Mg; Si; at least one element selected from the group consisting of Ca, Zn, Sr, Cd, and Ba; at least one element selected from the group consisting of Sn, Al, Sb, Ga, Pb, Cr, Mn, and Ge; and at least one element selected from the group consisting of Bi, Nb, Ta, V, W, and Mo.