US2005001295A1PendingUtilityA1

Adhesion enhanced semiconductor die for mold compound packaging

43
Priority: Sep 14, 1994Filed: May 24, 2004Published: Jan 6, 2005
Est. expirySep 14, 2014(expired)· nominal 20-yr term from priority
Inventors:Jerrold L. KingJ. Mike BrooksWalter L. Moden
H10W 74/00H10W 74/10H10W 72/865H10W 72/5363H10W 72/536H10W 90/756H10W 72/951H10W 72/075H10W 72/321H10W 72/07352H10W 90/736H10W 70/415H10W 74/127Y10S438/926Y10S438/928
43
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Claims

Abstract

A semiconductor die includes a metal layer deposited thereon for enhancing adhesion between the die and a mold compound package. The metal layer is substantially oxide free. The die is coated with a layer or layers of copper (Cu) and/or palladium (Pd) by electroplating or electroless coating techniques. The metal layer provides a uniform wetting surface for better adhesion of the die with the mold compound package during encapsulation. The increased adhesion reduces the delamination potential of the die from the package.

Claims

exact text as granted — not AI-modified
1 . A semiconductor device encapsulation method, comprising: 
 providing at least a portion of a back surface of a die with at least one substantially oxide-free metal in contact with the portion; and    applying packaging material to at least a portion of the at least one substantially oxide-free metal, the at least one substantially oxide-free metal enhancing adhesion of the packaging material to at least the portion.    
     
     
         2 . The method of  claim 1 , wherein providing comprises electroplating.  
     
     
         3 . The method of  claim 1 , wherein providing comprises electroless coating.  
     
     
         4 . The method of  claim 1 , wherein providing comprises providing a plurality of materials on at least the portion, an outermost material of which comprises a substantially oxide-free metal.  
     
     
         5 . The method of  claim 4 , wherein providing comprises: 
 providing at least the portion with copper; and    providing palladium over the copper.    
     
     
         6 . The method of  claim 1 , wherein providing comprises providing at least one of copper and palladium on at least the portion.  
     
     
         7 . The method of  claim 1 , wherein providing comprises providing the at least one substantially oxide-free metal over an entirety of the back surface of the die.  
     
     
         8 . The method of  claim 7 , wherein applying is effected over at least the portion of the back surface bearing the at least one substantially oxide-free metal.  
     
     
         9 . A semiconductor device encapsulation method, comprising: 
 providing at least a portion of a back surface of a die with at least one substantially oxide-free metal, the at least one substantially oxide-free metal contacting at least the portion; and    covering at least the portion of the back surface of the die with a packaging material, the packaging material being wettable with respect to the at least one substantially oxide-free metal.    
     
     
         10 . The method of  claim 9 , wherein providing comprises electroplating.  
     
     
         11 . The method of  claim 9 , wherein providing comprises electroless coating.  
     
     
         12 . The method of  claim 9 , wherein providing comprises providing a plurality of materials, an outermost of which comprises the at least one substantially oxide-free metal.  
     
     
         13 . The method of  claim 9 , wherein providing includes: 
 providing the portion of the back surface of the die with copper; and    providing palladium over the copper.    
     
     
         14 . The method of  claim 9 , wherein providing comprises providing at least the portion with at least one of palladium and copper.  
     
     
         15 . A method for enhancing adhesion of a packaging material to a semiconductor die, comprising: 
 providing at least a portion of a back surface of a semiconductor die with a first metal, the first metal contacting at least the portion of the back surface;    providing a substantially oxide-free metal over the first metal, the substantially oxide-free metal providing a wetting surface to enhance adhesion of a packaging material to at least the portion of the back surface; and    adhering the packaging material to at least the substantially oxide-free metal.    
     
     
         16 . The method of  claim 15 , wherein at least one of providing at least the portion of the back surface of the semiconductor die with the first metal and providing the substantially oxide-free metal comprises electroplating.  
     
     
         17 . The method of  claim 15 , wherein at least one of providing at least the portion of the back surface of the semiconductor die with the first metal and providing the substantially oxide-free metal comprises electroless coating.  
     
     
         18 . The method of  claim 15 , wherein providing at least the portion of the back surface of the semiconductor die with the first metal comprises disposing a substantially oxide-free metal.  
     
     
         19 . The method of  claim 18 , wherein providing at least the portion of the back surface of the semiconductor die with the first metal comprises disposing copper.  
     
     
         20 . The method of  claim 15 , wherein providing the substantially oxide-free metal comprises disposing palladium.  
     
     
         21 . A semiconductor device configured for enhanced adhesion to packaging material comprising: 
 an active surface carrying integrated circuitry;    a back surface opposite the active surface;    at least one substantially oxide-free metal in contact with at least a portion of the back surface; and    packaging material adjacent to at least a portion of the at least one substantially oxide-free metal.    
     
     
         22 . The semiconductor device of  claim 21 , further comprising: 
 leads secured in place relative to a remainder of the semiconductor device.    
     
     
         23 . The semiconductor device of  claim 22 , wherein the leads are secured directly to the remainder of the semiconductor device in a leads-over-chip arrangement.  
     
     
         24 . The semiconductor die of  claim 21 , wherein the packaging material comprises a plastic molding material.  
     
     
         25 . The semiconductor die of  claim 24 , wherein the plastic molding material comprises a thermoset epoxy material.  
     
     
         26 . The semiconductor die of  claim 21 , wherein the at least one substantially oxide-free metal comprises palladium or copper.  
     
     
         27 . The semiconductor die of  claim 21 , wherein the at least one substantially oxide-free metal comprises a plurality of metals.  
     
     
         28 . The semiconductor die of  claim 27 , wherein at least one metal of the plurality of metals comprises palladium or copper.

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