MOSFET device having geometry that permits frequent body contact

Abstract

A MOSFET device design is provided that effectively addresses the problems arising from the parasitic bipolar transistor that is intrinsic to the device. The MOSFET device comprises: (a) a body region; (b) a plurality of body contact regions; (c) a plurality of source regions; (d) a plurality of drain regions; and (d) a gate region. In plan view, the source regions and the drain regions are arranged in orthogonal rows and columns, and at least a portion of the body contact regions are bordered by four of the source and drain regions, preferably two source regions and two drain regions.

1 . A MOSFET device comprising: 
 a semiconductor region of first conductivity type having an upper surface;    a plurality of source regions of a second conductivity type formed within an upper portion of said semiconductor region adjacent said upper surface;    a plurality of drain regions of said second conductivity type formed within an upper portion of said semiconductor region adjacent said upper surface;    a plurality of body contact regions of said first conductivity type formed within an upper portion of said semiconductor region adjacent said upper surface; said body contact regions having a net doping concentration that is higher than that of said semiconductor region; and    a gate region disposed over said upper surface of said semiconductor region, said gate region comprising (a) a gate electrode region and (b) a gate dielectric layer disposed between said gate electrode region and said semiconductor region,    wherein, when viewed from above said upper surface, said source regions and said drain regions are arranged in orthogonal rows and columns, and wherein at least a portion of said body contact regions are bordered by four of said source and drain regions.    
   
   
       2 - 27 . (Canceled)