Semiconductor device and method for manufacturing the same

Abstract

A semiconductor device includes: a semiconductor substrate with a principal plane; a base region disposed on the principal plane; a source region disposed on the principal plane in the base region to be shallower than the base region; a drain region disposed on the principal plane, and spaced to the base region; a trench disposed on the principal plane; a trench gate electrode disposed in the trench through a trench gate insulation film; a planer gate electrode disposed on the principal plane of the semiconductor substrate through a planer gate insulation film; and an impurity diffusion region having high concentration of impurities and disposed in a portion of the base region to be a channel region facing the planer gate electrode.

1 . A semiconductor device comprising: 
 a semiconductor substrate with a first conductive type having a principal plane;    a base region having a second conductive type and disposed on the principal plane of the semiconductor substrate;    a source region having the first conductive type and disposed on the principal plane of the semiconductor substrate in the base region to be shallower than the base region;    a drain region having the first conductive type, disposed on the principal plane of the semiconductor substrate, and spaced to the base region;    a trench disposed on the principal plane of the semiconductor substrate, wherein the trench has a planer construction in such a manner that the trench penetrates the base region disposed between the source region and the drain region in a direction from the source region to the drain region;    a trench gate electrode disposed in the trench through a trench gate insulation film;    a planer gate electrode disposed on the principal plane of the semiconductor substrate through a planer gate insulation film; and    an impurity diffusion region having the second conductive type, having high concentration of impurities, and disposed in a portion of the base region to be a channel region facing the planer gate electrode.    
   
   
       2 . The semiconductor device according to  claim 1 , further comprising: 
 a device separation trench disposed around a device-to-be-formed region of the semiconductor substrate;    an insulation film disposed on an inner wall of the device separation trench, wherein the insulation film is the same film as the trench gate insulation film of the trench gate electrode;    a film disposed in the device separation trench through the insulation film, wherein the film is the same film as a film composing the trench gate electrode; and    another insulation film disposed in the device separation trench through the film and the insulation film.    
   
   
       3 . The semiconductor device according to  claim 1 , further comprising: 
 a device separation trench disposed around a device-to-be-formed region of the semiconductor substrate;    an insulation film disposed on an inner wall of the device separation trench, wherein the insulation film is thicker than the trench gate insulation film of the trench gate electrode; and    a film disposed in the device separation trench through the insulation film, wherein the film is the same film as a film composing the trench gate electrode.    
   
   
       4 . The semiconductor device according to  claim 1 , further comprising: 
 a device separation trench disposed around a device-to-be-formed region of the semiconductor substrate, wherein the device separation trench includes equal to or more than double trenches;    an insulation film disposed on an inner wall of the device separation trench, wherein the insulation film is the same film as the trench gate insulation film of the trench gate electrode; and    a film disposed in the device separation trench through the insulation film, wherein the film is the same film as a film composing the trench gate electrode.    
   
   
       5 . A semiconductor device comprising: 
 a semiconductor substrate with a first conductive type having a principal plane;    a base region having a second conductive type and disposed on the principal plane of the semiconductor substrate;    a source region having the first conductive type and disposed on the principal plane of the semiconductor substrate in the base region to be shallower than the base region;    a drain region having the first conductive type, disposed on the principal plane of the semiconductor substrate, and spaced to the base region;    a trench disposed on the principal plane of the semiconductor substrate, wherein the trench has a planer construction in such a manner that the trench penetrates the base region disposed between the source region and the drain region in a direction from the source region to the drain region;    a trench gate electrode disposed in the trench through a trench gate insulation film;    a planer gate electrode disposed on the principal plane of the semiconductor substrate through a planer gate insulation film; and    an impurity diffusion region having the second conductive type, having low concentration of impurities, and disposed in a portion of the base region to be a channel region facing the trench gate electrode.    
   
   
       6 . The semiconductor device according to  claim 5 , further comprising: 
 a device separation trench disposed around a device-to-be-formed region of the semiconductor substrate;    an insulation film disposed on an inner wall of the device separation trench, wherein the insulation film is the same film as the trench gate insulation film of the trench gate electrode;    a film disposed in the device separation trench through the insulation film, wherein the film is the same film as a film composing the trench gate electrode; and    another insulation film disposed in the device separation trench through the film and the insulation film.    
   
   
       7 . The semiconductor device according to  claim 5 , further comprising: 
 a device separation trench disposed around a device-to-be-formed region of the semiconductor substrate;    an insulation film disposed on an inner wall of the device separation trench, wherein the insulation film is thicker than the trench gate insulation film of the trench gate electrode; and    a film disposed in the device separation trench through the insulation film, wherein the film is the same film as a film composing the trench gate electrode.    
   
   
       8 . The semiconductor device according to  claim 5 , further comprising: 
 a device separation trench disposed around a device-to-be-formed region of the semiconductor substrate, wherein the device separation trench includes equal to or more than double trenches;    an insulation film disposed on an inner wall of the device separation trench, wherein the insulation film is the same film as the trench gate insulation film of the trench gate electrode; and    a film disposed in the device separation trench through the insulation film, wherein the film is the same film as a film composing the trench gate electrode.    
   
   
       9 . A semiconductor device comprising: 
 a semiconductor substrate with a first conductive type having a principal plane;    a base region including a bulk portion except for a well region, which has a first conductive type to be a drift region disposed on the principal plane of the semiconductor substrate;    a source region having the first conductive type and disposed on the principal plane of the semiconductor substrate in the base region;    a drain region having the first conductive type and disposed on the principal plane of the semiconductor substrate in the well region to be shallower than the well region;    a trench disposed on the principal plane of the semiconductor substrate, wherein the trench has a planer construction in such a manner that the trench penetrates the base region disposed between the source region and the drain region in a direction from the source region to the drain region;    a trench gate electrode disposed in the trench through a trench gate insulation film; and    a planer gate electrode disposed on the principal plane of the semiconductor substrate through a planer gate insulation film.    
   
   
       10 . The semiconductor device according to  claim 9 , further comprising: 
 a device separation trench disposed around a device-to-be-formed region of the semiconductor substrate;    an insulation film disposed on an inner wall of the device separation trench, wherein the insulation film is the same film as the trench gate insulation film of the trench gate electrode;    a film disposed in the device separation trench through the insulation film, wherein the film is the same film as a film composing the trench gate electrode; and    another insulation film disposed in the device separation trench through the film and the insulation film.    
   
   
       11 . The semiconductor device according to  claim 9 , further comprising: 
 a device separation trench disposed around a device-to-be-formed region of the semiconductor substrate;    an insulation film disposed on an inner wall of the device separation trench, wherein the insulation film is thicker than the trench gate insulation film of the trench gate electrode; and    a film disposed in the device separation trench through the insulation film, wherein the film is the same film as a film composing the trench gate electrode.    
   
   
       12 . The semiconductor device according to  claim 9 , further comprising: 
 a device separation trench disposed around a device-to-be-formed region of the semiconductor substrate, wherein the device separation trench includes equal to or more than double trenches;    an insulation film disposed on an inner wall of the device separation trench, wherein the insulation film is the same film as the trench gate insulation film of the trench gate electrode; and    a film disposed in the device separation trench through the insulation film, wherein the film is the same film as a film composing the trench gate electrode.    
   
   
       13 . A semiconductor device comprising: 
 a semiconductor substrate with a first conductive type having a principal plane;    a base region having a second conductive type and disposed on the principal plane of the semiconductor substrate;    a source region having the first conductive type and disposed on the principal plane of the semiconductor substrate in the base region to be shallower than the base region;    a drain region having the first conductive type, disposed on the principal plane of the semiconductor substrate, and spaced to the base region;    a trench disposed on the principal plane of the semiconductor substrate, wherein the trench has a planer construction in such a manner that the trench penetrates the base region disposed between the source region and the drain region in a direction from the source region to the drain region;    a trench gate electrode disposed in the trench through a trench gate insulation film;    a planer gate electrode disposed on the principal plane of the semiconductor substrate through a planer gate insulation film, wherein the planer gate electrode is an independent part independent from the trench gate electrode;    a trench gate wiring for applying a first gate voltage to the trench gate electrode; and    a planer gate wiring for applying a second gate voltage to the planer gate electrode.    
   
   
       14 . The semiconductor device according to  claim 13 , further comprising: 
 a device separation trench disposed around a device-to-be-formed region of the semiconductor substrate;    an insulation film disposed on an inner wall of the device separation trench, wherein the insulation film is the same film as the trench gate insulation film of the trench gate electrode;    a film disposed in the device separation trench through the insulation film, wherein the film is the same film as a film composing the trench gate electrode; and    another insulation film disposed in the device separation trench through the film and the insulation film.    
   
   
       15 . The semiconductor device according to  claim 13 , further comprising: 
 a device separation trench disposed around a device-to-be-formed region of the semiconductor substrate;    an insulation film disposed on an inner wall of the device separation trench, wherein the insulation film is thicker than the trench gate insulation film of the trench gate electrode; and    a film disposed in the device separation trench through the insulation film, wherein the film is the same film as a film composing the trench gate electrode.    
   
   
       16 . The semiconductor device according to  claim 13 , further comprising: 
 a device separation trench disposed around a device-to-be-formed region of the semiconductor substrate, wherein the device separation trench includes equal to or more than double trenches;    an insulation film disposed on an inner wall of the device separation trench, wherein the insulation film is the same film as the trench gate insulation film of the trench gate electrode; and    a film disposed in the device separation trench through the insulation film, wherein the film is the same film as a film composing the trench gate electrode.    
   
   
       17 . A semiconductor device comprising: 
 a semiconductor substrate with a first conductive type having a principal plane;    a base region having a second conductive type and disposed on the principal plane of the semiconductor substrate;    a source region having the first conductive type and disposed on the principal plane of the semiconductor substrate in the base region to be shallower than the base region;    a drain region having the first conductive type, disposed on the principal plane of the semiconductor substrate, and spaced to the base region;    a trench disposed on the principal plane of the semiconductor substrate, wherein the trench has a planer construction in such a manner that the trench penetrates the base region disposed between the source region and the drain region in a direction from the source region to the drain region;    a trench gate electrode disposed in the trench through a trench gate insulation film; and    a planer gate electrode disposed on the principal plane of the semiconductor substrate through a planer gate insulation film, wherein the planer gate insulation film is thicker than the trench gate insulation film.    
   
   
       18 . The semiconductor device according to  claim 17 , further comprising: 
 a device separation trench disposed around a device-to-be-formed region of the semiconductor substrate;    an insulation film disposed on an inner wall of the device separation trench, wherein the insulation film is the same film as the trench gate insulation film of the trench gate electrode;    a film disposed in the device separation trench through the insulation film, wherein the film is the same film as a film composing the trench gate electrode; and    another insulation film disposed in the device separation trench through the film and the insulation film.    
   
   
       19 . The semiconductor device according to  claim 17 , further comprising: 
 a device separation trench disposed around a device-to-be-formed region of the semiconductor substrate;    an insulation film disposed on an inner wall of the device separation trench, wherein the insulation film is thicker than the trench gate insulation film of the trench gate electrode; and    a film disposed in the device separation trench through the insulation film, wherein the film is the same film as a film composing the trench gate electrode.    
   
   
       20 . The semiconductor device according to  claim 17 , further comprising: 
 a device separation trench disposed around a device-to-be-formed region of the semiconductor substrate, wherein the device separation trench includes equal to or more than double trenches;    an insulation film disposed on an inner wall of the device separation trench, wherein the insulation film is the same film as the trench gate insulation film of the trench gate electrode; and    a film disposed in the device separation trench through the insulation film, wherein the film is the same film as a film composing the trench gate electrode.    
   
   
       21 . A method for manufacturing a semiconductor device, which includes: 
 a semiconductor substrate with a first conductive type having a principal plane;    a base region having a second conductive type and disposed on the principal plane of the semiconductor substrate;    a source region having the first conductive type and disposed on the principal plane of the semiconductor substrate in the base region to be shallower than the base region;    a drain region having the first conductive type, disposed on the principal plane of the semiconductor substrate, and spaced to the base region;    a trench disposed on the principal plane of the semiconductor substrate, wherein the trench has a planer construction in such a manner that the trench penetrates the base region disposed between the source region and the drain region in a direction from the source region to the drain region;    a trench gate electrode disposed in the trench through a gate insulation film; and    a planer gate electrode disposed on the principal plane through the gate insulation film, the method comprising the steps of:    forming the trench on the principal plane of the semiconductor substrate;    forming the gate insulation film on the principal plane of the semiconductor substrate including the inner wall of the trench;    forming the planer gate electrode on the principal plane of the semiconductor substrate through the gate insulation film together with forming the trench gate electrode in the trench through the gate insulation film;    forming the source region by an ion implantation method with using the planer gate electrode as a mask together with forming the base region; and    increasing an impurity concentration of a portion of the base region by implanting ions of a second conductive type element at a slant, the portion of the base region to be a channel region facing the planer gate electrode.    
   
   
       22 . The method according to  claim 21 , further comprising the steps of: 
 forming a device separation trench disposed around a device-to-be-formed region of the semiconductor substrate;    forming an insulation film disposed on an inner wall of the device separation trench, wherein the insulation film is the same film as the trench gate insulation film of the trench gate electrode;    forming a film disposed in the device separation trench through the insulation film, wherein the film is the same film as a film composing the trench gate electrode; and    forming another insulation film disposed in the device separation trench through the film and the insulation film.    
   
   
       23 . The method according to  claim 21 , further comprising the steps of: 
 forming a device separation trench disposed around a device-to-be-formed region of the semiconductor substrate;    forming an insulation film disposed on an inner wall of the device separation trench, wherein the insulation film is thicker than the trench gate insulation film of the trench gate electrode; and    forming a film disposed in the device separation trench through the insulation film, wherein the film is the same film as a film composing the trench gate electrode.    
   
   
       24 . The method according to  claim 21 , further comprising the steps of: 
 forming a device separation trench disposed around a device-to-be-formed region of the semiconductor substrate, wherein the device separation trench includes equal to or more than double trenches;    forming an insulation film disposed on an inner wall of the device separation trench, wherein the insulation film is the same film as the trench gate insulation film of the trench gate electrode; and    forming a film disposed in the device separation trench through the insulation film, wherein the film is the same film as a film composing the trench gate electrode.    
   
   
       25 . A method for manufacturing a semiconductor device, which includes: 
 a semiconductor substrate with a first conductive type having a principal plane;    a base region having a second conductive type and disposed on the principal plane of the semiconductor substrate;    a source region having the first conductive type and disposed on the principal plane of the semiconductor substrate in the base region to be shallower than the base region;    a drain region having the first conductive type, disposed on the principal plane of the semiconductor substrate, and spaced to the base region;    a trench disposed on the principal plane of the semiconductor substrate, wherein the trench has a planer construction in such a manner that the trench penetrates the base region disposed between the source region and the drain region in a direction from the source region to the drain region;    a trench gate electrode disposed in the trench through a gate insulation film; and    a planer gate electrode disposed on the principal plane of the semiconductor substrate through the gate insulation film, the method comprising the steps of:    forming the trench on the principal plane of the semiconductor substrate;    forming the gate insulation film on the principal plane of the semiconductor substrate including the inner wall of the trench;    forming the trench gate electrode in the trench through the gate insulation film;    forming the source region together with the base region;    increasing an impurity concentration of a portion of the base region by implanting ions of a second conductive type element, the portion of the base region to be a channel region facing the planer gate electrode and disposed on the principal plane of the semiconductor substrate; and    forming the planer gate electrode on the principal plane of the semiconductor substrate through the gate insulation film.    
   
   
       26 . The method according to  claim 25 , further comprising the steps of: 
 forming a device separation trench disposed around a device-to-be-formed region of the semiconductor substrate;    forming an insulation film disposed on an inner wall of the device separation trench, wherein the insulation film is the same film as the trench gate insulation film of the trench gate electrode;    forming a film disposed in the device separation trench through the insulation film, wherein the film is the same film as a film composing the trench gate electrode; and    forming another insulation film disposed in the device separation trench through the film and the insulation film.    
   
   
       27 . The method according to  claim 25 , further comprising the steps of: 
 forming a device separation trench disposed around a device-to-be-formed region of the semiconductor substrate;    forming an insulation film disposed on an inner wall of the device separation trench, wherein the insulation film is thicker than the trench gate insulation film of the trench gate electrode; and    forming a film disposed in the device separation trench through the insulation film, wherein the film is the same film as a film composing the trench gate electrode.    
   
   
       28 . The method according to  claim 25 , further comprising the steps of: 
 forming a device separation trench disposed around a device-to-be-formed region of the semiconductor substrate, wherein the device separation trench includes equal to or more than double trenches;    forming an insulation film disposed on an inner wall of the device separation trench, wherein the insulation film is the same film as the trench gate insulation film of the trench gate electrode; and    forming a film disposed in the device separation trench through the insulation film, wherein the film is the same film as a film composing the trench gate electrode.