Temperature control system in an ALD chamber

Abstract

A system and method for that allows one part of an atomic layer deposition (ALD) process sequence to occur at a first temperature while allowing another part of the ALD process sequence to occur at a second temperature. In such a fashion, the first temperature can be chosen to be lower such that decomposition or desorption of the adsorbed first reactant does not occur, and the second temperature can be chosen to be higher such that comparably greater deposition rate and film purity can be achieved. Additionally, the invention relates to improved temperature control in ALD to switch between these two thermal states in rapid succession. It is emphasized that this abstract is provided to comply with rules requiring an abstract. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims. [37 C.F.R. § 1.72(b)].

1 - 25 . (Canceled)  
   
   
       26 . A temperature control system for controlling a temperature of a substrate in an atomic layer deposition system, said temperature control system comprising: 
 a deposition chamber;    a vacuum pump coupled to said deposition chamber;    a substrate holder located within said deposition chamber, said substrate holder having a passageway for flowing a backside gas into a space between said substrate holder and said substrate on said substrate holder;    a gas inlet coupled to said deposition chamber; and    an energy source for heating by irradiation said substrate on said substrate holder.    
   
   
       27 . The temperature control system of  claim 26 , further comprising a means for valving and controlling a pressure of said backside gas.  
   
   
       28 . The temperature control system of  claim 26 , wherein said substrate holder is an electrostatic chuck.  
   
   
       29 . The temperature control system of  claim 28 , wherein said electrostatic chuck has a means for flowing a fluid therein.  
   
   
       30 . The temperature control system of  claim 29  wherein said electrostatic chuck has a cooling capacity of between about 200 W/m 2  K and 350 W/m 2  K.  
   
   
       31 . The temperature control system of  claim 29 , wherein said electrostatic chuck has a cooling capacity of at least  200  W/m 2  K.  
   
   
       32 . The temperature control system of  claim 28 , wherein there is a space between said substrate and said electrostatic chuck.  
   
   
       33 . The temperature control system of  claim 26 , wherein said energy source for heating said substrate is a rapid thermal processor.  
   
   
       34 . The temperature control system of  claim 33 , wherein said substrate is heated with a temperature ramp rate of about between 100° C. per second and 300° C. per second.  
   
   
       35 . The temperature control system of  claim 33 , wherein said substrate is heated with a temperature ramp rate of at least 100° C. per second.  
   
   
       36 . The temperature control system of  claim 33 , wherein a source for said rapid thermal processor is a graphite heater.  
   
   
       37 . The temperature control system of  claim 33 , wherein a source for said rapid thermal processor is a plasma arc.  
   
   
       38 . The temperature control system of  claim 33 , wherein a source for said rapid thermal processor is at least one tungsten halogen lamp.  
   
   
       39 . The temperature control system of  claim 26 , wherein said energy source is selected from the group consisting of a laser, an electron beam source, and an x-ray source.  
   
   
       40 . The temperature control system of  claim 39 , wherein said substrate is heated with a temperature ramp rate of about between 200° C. per second and 700° C. per second.  
   
   
       41 . The temperature control system of  claim 39 , wherein said substrate is heated with a temperature ramp rate of about between 200° C. per second.  
   
   
       42 . The temperature control system of  claim 39 , further comprising a means for scanning an output of said energy source over a surface of said substrate.  
   
   
       43 . The temperature control system of  claim 39 , further comprising a means for scanning said substrate relative to an output of said energy source.  
   
   
       44 - 47 . (Canceled)  
   
   
       48 . A system for depositing a film on a substrate in a chamber comprising: 
 a means for adjusting a temperature of said substrate to a first temperature;    a means for introducing a first reactant gas into said chamber;    a means for adsorbing substantially at least one monolayer of said first reactant gas onto said substrate;    a means for evacuating any excess of said first reactant gas from said chamber;    a means for adjusting a temperature of said substrate to a second temperature;    a means for introducing a second reactant gas into said chamber to react with said first reactant gas to produce said film on said substrate;    a means for evacuating any excess of said second reactant gas from said chamber; and    a means for adjusting a temperature of said substrate to a third temperature.    
   
   
       49 . The system of  claim 48 , wherein said means for adjusting a temperature of said substrate to a first temperature, said means for adjusting a temperature of said substrate to a second temperature, and said means for adjusting a temperature of said substrate to a third temperature is selected from the group consisting of ions, electrons, photons, and thermal energy.  
   
   
       50 . The system of  claim 49 , wherein said means for adjusting a temperature of said substrate to a first temperature, said means for adjusting a temperature of said substrate to as second temperature, and said means for adjusting a temperature of said substrate to a third temperature utilize an energy source selected from a group consisting of a rapid thermal processor, a laser, an electron beam source, and an x-ray source.  
   
   
       51 . The system of  claim 48 , wherein said third temperature equals said first temperature.