US2005000608A1PendingUtilityA1
Aluminum-silicon alloys having improved mechanical properties
Est. expiryNov 5, 2021(expired)· nominal 20-yr term from priority
C22F 1/043C22F 1/04C22C 21/04
43
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Claims
Abstract
A thermal treatment process for an article of a cast or wrought aluminum-silicon alloy with an eutectic phase. The process comprises a rapid heating of the article to an annealing temperature of 400° C. to 555° C. and maintaining the article at this temperature for a not more than 14.8 minutes.
Claims
exact text as granted — not AI-modified1 . A thermal treatment process for improving the material ductility of an article which comprises a cast or wrought aluminum-silicon alloy with an eutectic phase, which process comprises subjecting the article to an annealing treatment and a subsequent aging treatment, wherein the annealing treatment is carried out as a shock annealing treatment which comprises (a) a rapid heating of the material to an annealing temperature of 400° C. to 555° C., (b) maintaining the material at this temperature for a holding period of not more than 14.8 minutes, and (c) a subsequent forced cooling of the material to essentially room temperature.
2 . The process of claim 1 , wherein the aluminum-silicon alloy further comprises one or more alloying elements.
3 . The process of claim 1 , wherein the aluminum-silicon alloy further comprises one or more contaminating elements.
4 . The process of claim 1 , wherein the aluminum-silicon alloy further comprises at least one of Mg, Mn and Fe.
5 . The process of claim 1 , wherein the aluminum-silicon alloy is at least one of refined and purified.
6 . The process of claim 1 , wherein the holding period is shorter than 6.8 minutes.
7 . The process of claim 1 , wherein the holding period is not shorter than 1.7 minutes.
8 . The process of claim 7 , wherein the holding period is not longer than 5 minutes.
9 . The process of claim 1 , wherein the aging treatment comprises a treatment at a temperature of from 150° C. to 200° C.
10 . The process of claim 9 , wherein the aging treatment is carried out for from 1 to 14 hours.
11 . The process of claim 1 , wherein the aging treatment comprises a cold aging treatment at essentially room temperature.
12 . The process of claim 1 , wherein the holding period is from 1.7 to less than 6.8 minutes and the aging treatment comprises a treatment at a temperature of from 150° C. to 200° for from 1 to 14 hours.
13 . The process of claim 1 , wherein the holding period is from 1.7 to less than 6.8 minutes and the aging treatment comprises a cold aging treatment at essentially room temperature.
14 . The process if claim 1 , wherein the article is made by a thixocasting method.
15 . An article which is obtainable by the process of claim 1 .
16 . An article comprising an aluminum-silicon alloy with an eutectic phase, wherein the eutectic phase consists essentially of an α Al -matrix and spheroidized silicon precipitates, which precipitates have an average cross-sectional area, A Si , of not more than 4 μm 2 , A Si being represented by the following equation:
A
Si
=
1
n
∑
k
=
1
n
A
≤
4
μ
m
2
wherein
A Si =average area of the silicon particles in μm 2
A=average area of the silicon particles per image, in μm 2
n=number of images sampled.
17 . The article of claim 16 , wherein A Si is less than 2 μm 2 .
18 . The article of claim 16 , wherein the aluminum-silicon alloy further comprises at least one of one or more alloying elements and one or more contaminating elements.
19 . The article of claim 18 , wherein the aluminum-silicon alloy further comprises at least one of Mg, Mn and Fe.
20 . The article of claim 16 , wherein the aluminum-silicon alloy further comprises at least one processing element.
21 . An article comprising an aluminum-silicon alloy with an eutectic phase, wherein the eutectic phase consists essentially of an α Al -matrix and silicon precipitates, wherein the silicon precipitates comprise silicon particles and an average free path length between the silicon particles, λ Si , in the eutectic phase is not higher than 4 μm, λ Si being represented by the following equation:
λ
Si
=
1
n
∑
k
=
1
n
A
square
N
Silicon
≤
4
μ
m
wherein
λ Si =average spacing between the silicon particles
A square =square reference area in μm 2
N Silicon =number of silicon particles
n=number of images sampled.
22 . The article of claim 21 , wherein the average free path length is less than 3 μm.
23 . The article of claim 22 , wherein the average free path length is less than 2 μm.
24 . The article of claim 21 , wherein the aluminum-silicon alloy further comprises at least one of one or more alloying elements and one or more contaminating elements.
25 . The article of claim 24 , wherein the aluminum-silicon alloy further comprises at least one of Mg, Mn and Fe.
26 . The article of claim 21 , wherein the aluminum-silicon alloy further comprises at least one processing element.
27 . An article comprising an aluminum-silicon alloy with an eutectic phase, wherein the eutectic phase consists essentially of an α Al -matrix and silicon precipitates, wherein the silicon precipitates comprise silicon particles and an average spheroidization density, ζ Si , thereof, defined as a number of silicon particles per 100 μm 2 , is at least 10:
ξ
Si
=
1
n
∑
k
=
1
n
N
Si
A
×
100
≥
10
wherein
ζ Si =average spheroidization density of the eutectic Si particles
N Si =number of silicon particles
A=reference area in μm 2
n=number of images sampled.
28 . The article of claim 27 , wherein the average spheroidization density is greater than 20.
29 . The article of claim 27 , wherein the aluminum-silicon alloy farther comprises at least one of one or more alloying elements and one or more contaminating elements.
30 . The article of claim 29 , wherein the aluminum-silicon alloy further comprises at least one of Mg, Mn and Fe.
31 . The article of claim 27 , wherein the aluminum-silicon alloy further comprises at least one processing element.
32 . The article of claim 16 , wherein the article is made by a thixocasting method and is heat treated by a process which comprises subjecting the article to an annealing treatment and a subsequent aging treatment, the annealing treatment being carried out as a shock annealing treatment which comprises (a) a rapid heating of the article to an annealing temperature of 400° C. to 555° C., (b) maintaining the article at this temperature for a holding period of not more than 14.8 minutes, and (c) a subsequent forced cooling of the article to essentially room temperature.
33 . The article of claim 21 , wherein the article is made by a thixocasting method and is heat treated by a process which comprises subjecting the article to an annealing treatment and a subsequent aging treatment, the annealing treatment being carried out as a shock annealing treatment which comprises (a) a rapid heating of the article to an annealing temperature of 400° C. to 555° C., (b) maintaining the article at this temperature for a holding period of not more than 14.8 minutes, and (c) a subsequent forced cooling of the article to essentially room temperature.
34 . The article of claim 27 , wherein the article is made by a thixocasting method and is heat treated by a process which comprises subjecting the article to an annealing treatment and a subsequent aging treatment, the annealing treatment being carried out as a shock annealing treatment which comprises (a) a rapid heating of the article to an annealing temperature of 400° C. to 555° C., (b) maintaining the article at this temperature for a holding period of not more than 14.8 minutes, and (c) a subsequent forced cooling of the article to essentially room temperature.Join the waitlist — get patent alerts
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