Field emission type cold cathode device, manufacturing method thereof and vacuum micro device

Abstract

A field emission type cold cathode device comprises a substrate, and a metal plating layer formed on the substrate, the metal plating layer contains at least one carbon structure selected from a group of fullerenes and carbon nanotubes, the carbon structure is stuck out from the metal plating layer and a part of the carbon structure is buried in the metal plating layer.

1 . A field emission type cold cathode device comprising: 
 a substrate;    a cathode line formed on said substrate; and    a metal plating layer formed along top and side surfaces of said cathode line and having a substantially uniform thickness;    said metal plating layer containing at least one carbon structure selected from a group of fullerene and carbon nanotube, said carbon structure being stuck out from said metal plating layer and a part of said carbon structure being buried in said metal plating layer.    
     
     
         2 - 18 . (Canceled)  
     
     
         19 . The field emission type cold cathode device according to  claim 1 , wherein said metal plating layer is selected from a group of nickel, chromium and copper.  
     
     
         20 . The field emission type cold cathode device according to  claim 1 , wherein said metal plating layer is formed by either electroplating processing or electroless plating processing.  
     
     
         21 . The field emission type cold cathode device according to  claim 1 , wherein said carbon nanotube has a conductive material inside.  
     
     
         22 . The field emission type cold cathode device according to  claim 21 , wherein said conductive material comprises a content of a plating liquid.  
     
     
         23 . The field emission type cold cathode device according to  claim 21 , wherein said conductive material is selected from a group consisting of Mo, Ta, W, Ni, Cr, Fe, Co, Cu, Si, LaB 6 , AlN, GaN, carbon, graphite and diamond.  
     
     
         24 . The field emission type cold cathode device according to  claim 1 , wherein said metal plating layer is formed by electroplating processing, and said carbon nanotube stuck out from said metal plating layer is perpendicular to the top surface of said cathode line.  
     
     
         25 . A vacuum micro device comprising: 
 a substrate;    a cathode line formed on said substrate;    a metal plating layer formed along top and side surfaces of said cathode line and having a substantially uniform thickness;    said metal plating layer containing at least one carbon structure selected from a group of fullerene and carbon nanotube, said carbon structure being stuck out from said metal plating layer and a part of said carbon structure being buried in said metal plating layer; and    an electrode disposed separately from said substrate, said electrode having applied thereto a higher electrical potential than an electrical potential applied to said metal plating layer.    
     
     
         26 . The vacuum micro device according to  claim 25 , wherein said metal plating layer is formed by electroplating processing, and said carbon nanotube stuck out from said metal plating layer is perpendicular to the top surface of said cathode line.  
     
     
         27 . A vacuum micro device comprising: 
 a first substrate;    a cathode line formed on said first substrate;    a metal plating layer formed along top and side surfaces of said cathode line and having a substantially uniform thickness;    said metal plating layer containing at least one carbon structure selected from a group of fullerene and carbon nanotube, said carbon structure being stuck out from said metal plating layer and a part of said carbon structure being buried in said metal plating layer;    a second substrate opposed to said first substrate;    an electrode formed on said second substrate, said electrode having applied thereto a higher electrical potential than an electrical potential applied to said metal plating layer; and    a luminescent material formed on said electrode.    
     
     
         28 . The vacuum micro device according to  claim 27 , wherein said metal plating layer is formed by electroplating processing, and said carbon nanotube stuck out from said metal plating layer is perpendicular to the top surface of said cathode line.  
     
     
         29 . A manufacturing method of field emission type cold cathode device, comprising: 
 immersing a substrate on which a cathode line is formed in a plating liquid containing at least one carbon structure selected from a group of consisting of fullerene and carbon nanotube; and    forming a metal plating layer having a substantially uniform thickness along top and side surfaces of said cathode line, said metal plating layer containing said carbon structure, said carbon structure being stuck out from said metal plating layer and a part of said carbon structure being buried in said metal plating layer.    
     
     
         30 . The manufacturing method according to  claim 29 , wherein said metal plating layer is formed by electroplating processing, and said carbon nanotube stuck out from said metal plating layer is perpendicular to the top surface of said cathode line.