Metal thin film of semiconductor device and method for forming same

Abstract

A metal thin film of a semiconductor device and method for forming the same is disclosed, in which excellent step coverage and surface roughness are maintained. The metal thin film of a semiconductor device according to the present invention includes: a barrier metal layer formed on a semiconductor substrate; and a PVD seed thin film, a CVD thin film, and a PVD reflow thin film sequentially formed on the barrier metal layer, wherein the PVD seed thin film, the CVD thin film and the PVD reflow thin film are of the same material.

1 . A metal thin film of a semiconductor device comprising: 
 a barrier metal layer formed on a semiconductor substrate; and    a PVD seed thin film, a CVD thin film, and a PVD reflow thin film sequentially formed on the barrier metal layer, wherein the PVD seed thin film, the CVD thin film and the PVD reflow thin film are of the same material.    
     
     
         2 . The metal thin film of  claim 1 , the PVD seed thin film, the CVD thin film, and the PVD reflow thin film are of Al or Cu.  
     
     
         3 . The metal thin film of  claim 1 , further comprising an interleaving insulating film between the semiconductor substrate and the PVD seed thin film.  
     
     
         4 . The metal thin film of  claim 1 , wherein the barrier metal layer is of any one of Ti, TiN and Ti/TiN.  
     
     
         5 . The metal thin film of  claim 1 , further comprising an ARC layer of Ti/TiN on the PVD reflow thin film.  
     
     
         6 - 18 . (Canceled).