Coils for generating a plasma and for sputtering

Abstract

A sputtering coil for a plasma chamber in a semiconductor fabrication system is provided. The sputtering coil couples energy into a plasma and also provides a source of sputtering material to be sputtered onto a workpiece from the coil to supplement material being sputtered from a target onto the workpiece. Alternatively a plurality of coils may be provided, one primarily for coupling energy into the plasma and the other primarily for providing a supplemental source of sputtering material to be sputtered on the workpiece.

1 . An apparatus for sputter deposition of a film layer onto a substrate, comprising: 
 a vacuum chamber having a substrate support member maintainable therein;    a first biasable target disposed in said chamber; and    a second biasable target disposed in said chamber adjacent to and extending substantially around a space defined between said target and said substrate support.    
     
     
         2 - 40 . Cancelled  
     
     
         41 . An RF coil for sputter deposition of a layer of coil material onto a substrate on a substrate support in a sputter deposition chamber having a target, said RF coil comprising: 
 a ribbon-shaped member having an exterior surface comprising a sputterable deposition material, said member being adapted to be carried within said chamber and to sputter deposition material from said member onto said substrate.    
     
     
         42 . The coil of  claim 41  wherein said member has a diameter sufficient to extend substantially around a space defined between said target and said substrate support.  
     
     
         43 . The coil of  claim 42  wherein said diameter is in a range of 10 to 12 inches.  
     
     
         44 . The coil of  claim 41  wherein said chamber has RF feedthrough standoffs and wherein said member has two ends, each of which is adapted to be coupled to an RF feedthrough standoff.  
     
     
         45 . The coil of  claim 41  wherein said sputterable deposition material is selected from the group of aluminum, titanium.  
     
     
         46 . The coil of  claim 41  wherein said member is a single turn coil.  
     
     
         47 . The coil of  claim 41  wherein said member has a height of {fraction (1/2)} inch.  
     
     
         48 . The coil of  claim 47  wherein said member has a thickness of {fraction (1/8)} inch.  
     
     
         49 . The coil of  claim 41  wherein said member has a height in excess of 2 inches.  
     
     
         50 . The coil of  claim 49  wherein said member is as thin as {fraction (1/16)} inch.  
     
     
         51 . A coil for use with an RF generator, for sputter deposition of a film layer onto a substrate in a vacuum chamber having a substrate support maintainable therein, a plasma generation area within said chamber, and a shield having a wall which substantially encircles said plasma generation area and said substrate support, and a first biasable target disposed in said chamber, the coil comprising: 
 a sputterable coil member having a first end adapted to be coupled to said RF generator and a second end adapted to be coupled to ground, said coil member being adapted to be insulatively carried by said wall, to substantially encircle said plasma generation area, to be positioned to couple energy inductively into said plasma generation area and to be positioned adjacent to said substrate support to sputter material from said coil onto said substrate.    
     
     
         52 . The coil of  claim 51  wherein said coil member is ribbon-shaped.  
     
     
         53 . The coil of  claim 51  wherein said member has a diameter sufficient to extend substantially around a space defined between said target and said substrate support.  
     
     
         54 . The coil of  claim 53  wherein said diameter is in a range of 10 to 12 inches.  
     
     
         55 . The coil of  claim 51  wherein said chamber has RF feedthrough standoffs and wherein said member has two ends, each of which is adapted to be coupled to an RF feedthrough standoff.  
     
     
         56 . The coil of  claim 51  wherein said sputterable deposition material is selected from the group of aluminum, titanium.  
     
     
         57 . The coil of  claim 51  wherein said member is a single turn coil.  
     
     
         58 . The coil of  claim 51  wherein said member has a height of {fraction (1/2)} inch.  
     
     
         59 . The coil of  claim 58  wherein said member has a thickness of {fraction (1/8)} inch.  
     
     
         60 . The coil of  claim 51  wherein said member has a height in excess of 2 inches.  
     
     
         61 . The coil of  claim 60  wherein said member is as thin as {fraction (1/16)} inch.  
     
     
         62 . The coil of  claim 51  wherein said target and said coil member are each formed of the same material adapted to be sputtered onto said substrate.