Polishing element, cmp polishing device and productionj method for semiconductor device

Abstract

The wafer 11 that is the object of polishing is held by a polishing head 12 , and rotates together with the polishing head 12 . A polishing body 14 is attached to the polishing member 13 by bonding using an adhesive agent or two-sided adhesive tape, etc. As is shown in (b), the polishing body 14 is constructed by laminating a soft member 15 , a hard elastic member 16 and a polishing pad 17 . The hard elastic member 16 is constructed so that the amount of deformation of the hard elastic member 16 at the polishing load that is applied during polishing is smaller than the step difference that is permitted in the above-mentioned wafer in the interval corresponding to the maximum pattern of the above-mentioned semiconductor integrated circuits, and is larger than the TTV that is permitted in the above-mentioned wafer in the interval corresponding to one chip. As a result, the requirements of both “wafer global removal uniformity” and local pattern planarity” can be satisfied.

1 . A polishing body for a CMP polishing apparatus which is used to polish wafers that have semiconductor integrated circuits formed inside, wherein a polishing pad, a hard elastic member and a soft member are laminated in that order, and the above-mentioned hard elastic member is constructed so that the amount of deformation of this member at the polishing load that is applied during polishing is smaller than the step difference permitted in the above-mentioned wafer in an interval corresponding to the maximum pattern of the above-mentioned semiconductor integrated circuits, and is greater than the TTV permitted in the above-mentioned wafer in the interval corresponding to one chip.  
     
     
         2 . The polishing body according to  claim 1 , wherein the above-mentioned hard elastic member is constructed from a metal plate that will not dissolve in the polishing agent.  
     
     
         3 . The polishing body according to  claim 2 , wherein the above-mentioned metal plate is a stainless steel plate, and the thickness h of this plate is such that 0.1 mm<h<0.94 mm.  
     
     
         4 . The polishing body according to  claim 1 , wherein the above-mentioned soft member has a torsional strength which is such that this member is not damaged when the member rotates with a load applied during polishing.  
     
     
         5 . The polishing body according to  claim 1 , wherein the above-mentioned hard elastic member is constructed from a metal plate that will not dissolve in the polishing agent and soft member are fastened by bonding, and the above-mentioned hard elastic member and polishing pad are fastened by vacuum suction.  
     
     
         6 . The polishing body according to  claim 1 , wherein the above-mentioned hard elastic member and soft member are fastened by bonding means with a strong peeling strength, and the above-mentioned hard elastic member and polishing pad are fastened by bonding means with a weak peeling strength.  
     
     
         7 . A CMP polishing apparatus which is used to polish wafers that have semiconductor integrated circuits formed inside, and which has the polishing body according to  claim 1 .  
     
     
         8 . A CMP polishing apparatus which is used to polish wafers that have semiconductor integrated circuits formed inside, and which has the polishing body according to  claim 5 , wherein the dimensions of the above-mentioned polishing pad are set so that these dimensions are smaller than the dimensions of the wafer that is being polished.  
     
     
         9 . A CMP polishing apparatus which is used to polish wafers that have semiconductor integrated circuits formed inside, and which has the polishing body according to  claim 6 , wherein the dimensions of the above-mentioned polishing pad are set so that these dimensions are smaller than the dimensions of the wafer that is being polished.  
     
     
         10 . A CMP polishing apparatus which is used to polish wafers that have semiconductor integrated circuits formed inside, and which has the polishing body according to  claim 4 , wherein the dimensions of the above-mentioned polishing pad are set so that these dimensions are smaller than the dimensions of the wafer that is being polished, and the permissible shear stress of the above-mentioned soft member is greater than 0.5 Kg/cm 2 .  
     
     
         11 . A polishing body for a CMP polishing apparatus which is used to polish wafers that have semiconductor integrated circuits formed inside, wherein a polishing pad, a hard elastic member and a soft member are laminated in that order, and these parts are constructed so that the combined amount of deformation of the polishing pad, hard elastic member and soft member is smaller than the height of the indentations and projections of the above-mentioned maximum pattern in the interval corresponding to the maximum pattern of the above-mentioned semiconductor integrated circuits, and is greater than five times the TTV that is permitted in the above-mentioned wafer.  
     
     
         12 . The polishing body according to  claim 11 , wherein the above-mentioned hard elastic member is constructed from a metal plate that will not dissolve in the polishing agent.  
     
     
         13 . The polishing body according to  claim 12 , wherein the above-mentioned polishing pad consists of a urethane foam material, the above-mentioned metal plate is a stainless steel plate, the thickness of the above-mentioned polishing pad is  0 . 1  to  3  mm, the thickness of the above-mentioned metal body is  0 . 05  to  0 . 6  mm, and the thickness of the above-mentioned soft member is  0 . 5  to  2 . 5  mm.  
     
     
         14 . The polishing body according to any one of  claim 11 , wherein the above-mentioned soft member has a torsional strength which is such that this member is not damaged when the member rotates with a load applied during polishing.  
     
     
         15 . The polishing body according to any one of  claim 11 , wherein the above-mentioned hard elastic member and soft member are fastened by bonding, and the above-mentioned hard elastic member and polishing pad are fastened by vacuum suction.  
     
     
         16 . The polishing body according to  claim 11 , wherein the above-mentioned hard elastic member and soft member are fastened by bonding means with a strong peeling strength, and the above-mentioned hard elastic member and polishing pad are fastened by bonding means with a weak peeling strength.  
     
     
         17 . A CMP polishing apparatus which is used to polish wafers that have semiconductor integrated circuits formed inside, and which has the polishing body according to  claim 11 .  
     
     
         18 . A CMP polishing apparatus which is used to polish wafers that have semiconductor integrated circuits formed inside, and which has the polishing body according to  claim 15 , wherein the dimensions of the above-mentioned polishing pad are set so that these dimensions are smaller than the dimensions of the wafer that is being polished.  
     
     
         19 . A CMP polishing apparatus which is used to polish wafers that have semiconductor integrated circuits formed inside, and which has the polishing body according to  claim 16 , wherein the dimensions of the above-mentioned polishing pad are set so that these dimensions are smaller than the dimensions of the wafer that is being polished.  
     
     
         20 . A CMP polishing apparatus which is used to polish wafers that have semiconductor integrated circuits formed inside, and which has the polishing body according to  claim 14 , wherein the dimensions of the above-mentioned polishing pad are set so that these dimensions are smaller than the dimensions of the wafer that is being polished, and the permissible shear stress of the above-mentioned soft member is greater than 0.5 Kg/cm 2 .  
     
     
         21 . A semiconductor device manufacturing method which is characterized in that this method has a process in which the polishing of wafers is performed using the CMP polishing apparatus according to any one of claims  7  through  10  and claims  17  thorough  20 .