Method for fabricating semiconductor device

Abstract

A method for fabricating a semiconductor device is disclosed. A spacer is formed on the sidewall of the contact hole in which a storage node contact plug is buried. An etch barrier film and an insulating film are sequentially formed after the formation of the storage node contact plug. The insulating film and the etch barrier film are sequentially etched to form an opening part. Then a storage node is formed within the opening part which has been formed by an etching. Then prominences are formed on the surface of the storage node.

1 . A method for fabricating a contact plug, comprising: 
 forming an insulating film on a semiconductor substrate;    selectively etching the insulating film to form a contact hole so as to expose the semiconductor substrate;    forming a spacer on a side wall of the contact hole; and    depositing a conductive film into the contact hole.    
     
     
         2 . The method as claimed in  claim 1 , wherein forming the spacer comprises: 
 forming a nitride film on an entire surface including the contact hole; and    thoroughly etching the nitride film to form the spacer.    
     
     
         3 . The method as claimed in  claim 2 , wherein the nitride film is deposited to a thickness ranging from 100 Å to 200 Å.  
     
     
         4 . The method as claimed in  claim 1 , wherein forming the contact hole comprises over-etching the insulating film by 30%.  
     
     
         5 . The method as claimed in  claim 1 , wherein the conductive film is formed with one or more materials selected from a group comprising polysilicon, aluminum, molybdenum, and tungsten.  
     
     
         6 - 22 . (Cancelled)