Forming a semiconductor device feature using acquired parameters

Abstract

In one embodiment of the present invention, a method includes acquiring parameters for a desired feature of a semiconductor device; determining a data array using the parameters; and forming the desired feature using the data array. The desired feature in one embodiment may be a backside trench.

1 . A method comprising: 
 acquiring parameters for a desired feature of a semiconductor device;    determining a data array using the parameters; and    forming the desired feature using the data array.    
     
     
         2 . The method of  claim 1 , further comprising using a focused ion beam tool to form the desired feature.  
     
     
         3 . The method of  claim 1 , further comprising performing a plurality of tool iterations to form the desired feature, the plurality of tool iterations greater than ten.  
     
     
         4 . The method of  claim 3 , wherein determining the data array comprises calculating dimensions for each of the tool iterations based on a primary pattern size.  
     
     
         5 . The method of  claim 4 , wherein the plurality of tool iterations form a trench having a non-linear profile on a backside of a substrate.  
     
     
         6 . The method of  claim 5 , further comprising forming a metal layer over the non-linear profile.  
     
     
         7 . The method of  claim 1 , further comprising forming a stepless silicon trench as the desired feature.  
     
     
         8 . The method of  claim 2 , further comprising acquiring the parameters via a user input device associated with the focused ion beam tool.  
     
     
         9 . A method comprising: 
 calculating a plurality of patters corresponding to a desired feature of a semiconductor device from a set of parameters; and    forming the desired feature using the plurality of patterns.    
     
     
         10 . The method of  claim 9 , further comprising forming a trench on a backside of a substrate supporting the semiconductor device as the desired feature.  
     
     
         11 . The method of  claim 9 , wherein the set of parameters comprise dimensions of a trench and at least one angle relating to the trench.  
     
     
         12 . The method of  claim 9 , wherein calculating the plurality of patterns comprises calculating a plurality of box patterns and wherein the set of parameters comprises a primary box size.  
     
     
         13 . The method of  claim 9 , further comprising forming the desired feature using a focused ion beam tool.  
     
     
         14 . The method of  claim 13 , further comprising acquiring the set of parameters using an input device associated with the focused ion beam tool.  
     
     
         15 - 20 . (Canceled)