Semiconductor device isolation structure and method of forming

Abstract

A method for isolating semiconductor devices includes forming a first oxide layer outwardly from a semiconductor substrate, forming a first nitride layer outwardly from the first oxide layer, removing a portion of the first nitride layer, a portion of the first oxide layer, and a portion of the substrate to form a trench isolation region, forming a second oxide layer in the trench isolation region, forming a spin-on-glass region in the trench isolation region, annealing the spin-on-glass region, removing a portion of the spin-on-glass region to expose a shallow trench isolation region, and forming a third oxide layer in the shallow trench isolation region.

1 - 8 . (cancelled)  
     
     
         9 . A semiconductor device isolation structure, comprising: 
 a first oxide layer disposed outwardly from a semiconductor substrate;    a first nitride layer disposed outwardly from the first oxide layer;    a trench isolation region formed by removing a portion of the first nitride layer, a portion of the first oxide layer, and a portion of the substrate;    a second oxide layer lining the trench isolation region;    a spin-on-glass region disposed in the isolation region; and    a third oxide layer disposed outwardly from the spin-on-glass region.    
     
     
         10 . (cancelled)  
     
     
         11 . (cancelled)  
     
     
         12 . The structure of  claim 9 , wherein the spin-on-glass region is annealed at a temperature between approximately 300° C. and 400° C. for a time period between approximately 15 and 30 minutes, and afterward annealed at a temperature between approximately 900° C. and 1000° C. for a time period between approximately 5 and 10 minutes.  
     
     
         13 . The structure of  claim 9 , wherein the spin-on-glass region is annealed at a temperature of approximately 400° C. for a time period of approximately 30 minutes, and afterward annealed at a temperature of approximately 1000° C. for a time period between approximately 5 and 10 minutes.  
     
     
         14 . The structure of  claim 9 , further comprising a shallow trench isolation region formed by removing a portion of the trench isolation region, the shallow trench isolation region having a depth between approximately 2000 Å and 2700 Å.  
     
     
         15 . The structure of  claim 9 , further comprising a shallow trench isolation region formed by removing a portion of the trench isolation region, the shallow trench isolation region having a depth of approximately 2000 Å.  
     
     
         16 . The structure of  claim 9 , wherein the second oxide layer has a thickness of approximately 150 Å.