Chemical mechanical polishing agent kit and chemical mechanical polishing method using the same

Abstract

A chemical mechanical polishing method of the present invention comprises conducting polishing by the use of a chemical mechanical polishing aqueous dispersion (A) containing abrasive grains and then conducting polishing by the use of a chemical mechanical polishing aqueous composition (B) containing at least one organic compound having a heterocyclic ring in addition to the chemical mechanical polishing aqueous dispersion (A). Also A chemical mechanical polishing agent kit of the present invention comprises the chemical mechanical polishing aqueous dispersion (A) and the chemical mechanical polishing aqueous composition (B). The polishing method and the polishing agent kit can prevent an increase of dishing and corrosion of wiring portion to enhance the yield.

What is claimed is:  
     
         1 . A chemical mechanical polishing agent kit comprising a combination of a chemical mechanical polishing aqueous dispersion (A) containing abrasive grains and a chemical mechanical polishing aqueous composition (B) which contains at least one organic compound having a heterocyclic ring, wherein the aqueous composition (B) does not mix with the aqueous dispersion (A).  
     
     
         2 . The chemical mechanical polishing agent kit as claimed in  claim 1 , wherein the chemical mechanical polishing aqueous composition (B) further contains a surface active agent.  
     
     
         3 . The chemical mechanical polishing agent kit as claimed in  claim 1 , wherein: 
 (i) the chemical mechanical polishing aqueous composition (B) contains no abrasive grain or contains abrasive grains in a concentration of not more than ½ the abrasive grain concentration of the chemical mechanical polishing aqueous dispersion (A), and    (ii) the chemical mechanical polishing aqueous composition (B) contains the organic compound having a heterocyclic ring in a concentration of 0.005 to 3% by weight.    
     
     
         4 . The chemical mechanical polishing agent kit as claimed in  claim 3 , wherein the chemical mechanical polishing aqueous composition (B) further contains a surface active agent in a concentration of 0.005 to 1% by weight.  
     
     
         5 . The chemical mechanical polishing agent kit as claimed in  claim 3 , wherein the chemical mechanical polishing aqueous dispersion (A) further contains an oxidizing agent, and the chemical mechanical polishing aqueous composition (B) contains no oxidizing agent or contains an oxidizing agent in a concentration of not more than ½ the oxidizing agent concentration of the chemical mechanical polishing aqueous dispersion (A).  
     
     
         6 . The chemical mechanical polishing agent kit as claimed in any one of  claim 1 , wherein the chemical mechanical polishing aqueous dispersion (A) contains the abrasive grains in a concentration of 0.01 to 5% by weight, an organic compound having a heterocyclic ring in a concentration of 0.01 to 5% by weight, a surface active agent in a concentration of 0.01 to 2% by weight and an oxidizing agent in a concentration of 0.01 to 9% by weight.  
     
     
         7 . A method for chemical mechanical polishing of a metal layer formed on a surface of a semiconductor substrate, on said surface a metal wiring portion being present, in the production of the semiconductor substrate comprising the substrate having a trench and a metal material buried in the trench, said metal material forming the metal wiring portion, which comprises: 
 polishing the metal layer with feeding a chemical mechanical polishing aqueous dispersion (A) containing abrasive grains until a layer different from the metal layer is exposed in a non-wiring area other than the metal portion, and subsequently, polishing the metal layer remaining on the non-wiring area during the above polishing with feeding a chemical mechanical polishing aqueous composition (B) containing at least one organic compound having a heterocyclic ring in addition to the chemical mechanical polishing aqueous dispersion (A).