Fluorinated aromatic precursors

Abstract

Intermetal dielectric (IMD) and interlevel dielectric (ILD) that have dielectric constants (K) ranging from 2.0 to 2.6 are prepared from plasma or photon assisted CVD (PACVD) or transport polymerization (TP). The low K dielectric (LKD) materials are prepared from PACVD or TP of some selected siloxanes and F-containing aromatic compounds. The thin films combine barrier and adhesion layer functions with low dielectric constant functions, thus eliminating the necessity for separate adhesion and barrier layers, and layers of low dielectric constant. The LKD materials disclosed in this invention are particularly useful for <0.18 μm ICs, or when copper is used as conductor in future ICs.

1 - 70 . Cancel.  
     
     
         71 . A precursor for making a polymer, said precursor having the formula: Y—Ar—(Y′) z , wherein z is an integer of 1 to about 6, wherein Y and Y′ are leaving groups, and Ar is a compound containing an aromatic moiety having from greater than 6 to about 40 carbon atoms, and having at least one sp 2 C-sp 2 C double bond and one or more of a sp 2 C—F bond or a sp 2  C—H bond.  
     
     
         72 . The precursor of  claim 71 , wherein Ar is selected from the group consisting of 
 —(CH (2-n) F n )—(C 6 H (4-m) F m )—, wherein n is 1 or 2 and m is an integer ranging from 1 to 4,    —(CH (2-n) F n )—(C 6 H (4-m) F m )—(CH (2-o) F o )— wherein n is 1 or 2 and m is an integer ranging from 1 to 4 and o is 1 or 2,    —(CH (2-n) F n )—(C 6 H (4-m) F m )—(C 6 H (4-o) F o )— wherein n is 1 or 2 and m is an integer ranging from 1 to 4 and o is an integer ranging from 1 to 4,    —(CH (2-n) F n )—(C 6 H (4-m) F m )—(C 6 H (4-o) F o )—(CH (2-p) F p )— wherein n is 1 or 2 and m is an integer ranging from 1 to 4 and o is an integer ranging from 1 to 4 and p is 1 or 2,    —C 10 H (6-n) F n —, wherein n is an integer ranging from 0 to 6,    —C 12 H (8-n) F n —, wherein n is an integer ranging from 0 to 8,    —C 13 H (7-n) F n —, wherein n is an integer ranging from 0 to 7,    —C 14 H (8-n) F n —, wherein n is an integer ranging from 0 to 8,    —C 16 H (10-n) F n —, wherein n is an integer ranging from 0 to 10,    —C 10 H (8-n) F n — wherein n is an integer ranging from 0 to 8,    —C 16 H (8-n) F n —, wherein n is an integer ranging from 0 to 8,    —(C 6 H 4-n F n )—(C 10 H 6-m F m )—, where n is an integer ranging from 1 to 4 and m is an integer ranging from 1 to 6,    —(C 14 H (8-n) F n )—(C 16 H (8-n) F n )—, wherein n and m are independently integers ranging from 1 to 8, and    —(C 14 H (8-n) F n )—(C 16 H (10-m) F m )—, wherein n is an integer ranging from 1 to 8 and m is an integer ranging from 1 to 10;    —(C 10 H 6-m F m )—(C 10 H 6-n F n )—(C 10 H 6-o F o )—, wherein m, n and o are integers independently selected from 1 to 6;    —C 14 H (8-m) F m —(C 10 H 6-n F n )—C 14 H (8-o) F o —, wherein m and o are integers independently selected from 1 to 8 and n is an integer from 1 to 6, and    a positional isomer of any of the above.    
     
     
         73 . The precursor of  claim 71 , wherein Y and Y′ are independently selected from the group consisting of —H, —Cl, —Br, —NR, —SR, —SiR 3 , —NR 2  and —SO 2 R, wherein R is —H, an alkyl group or an aromatic group.  
     
     
         74 . The precursor of  claim 71 , wherein Y is a leaving group selected from the group consisting of —H, —Br and —F.  
     
     
         75 . The precursor of  claim 71 , wherein Y and Y′ are Br.  
     
     
         76 . The precursor of  claim 71 , wherein Ar is selected from the group consisting of: 
 —CF 2 —(C 6 F 4 )—,    —CF 2 —(C 6 F 4 )—(C 6 F 4 )—,    —CF 2 —(C 6 F 4 )—(C 6 F 4 )—CF 2 —,    —(CF 2 )—(C 6 F 4 )—(C 6 F 4 )—,    —(CF 2 )—(C 6 F 4 )—(C 6 F 4 )—(CF 2 )—,    —C 10 F 6 —,    —C 12 F 8 —,    —C 13 F 7 —,    —C 14 F 8 —,    —C 10 F 8 —,    —C 16 F 8 —,    —(C 6 F 4 )—(C 10 F 6 )—,    —(C 14 F 8 )—(C 16 F 8 )—,    —(C 14 F 8 )—(C 16 F 10 )—,    —(C 10 F 6 )—(C 10 F 6 )—(C 10 F 6 )—, and    —(C 14 F 8 )—(C 10 F 6 )—(C 14 F 8 )—,    —(C 10 F 6 )—(C 10 F 6 )—(C 10 F 6 )—,    —(C 10 F 6 )—(C 10 F 6 )—(C 10 F 6 )—(C 10 F 6 )—,    a combination of one or more of the above Ar groups, with the proviso that the total number of carbon atoms is said Ar group is less than about 40, and    a positional isomer of any of the above.    
     
     
         77 . The precursor of  claim 71  having a formula selected from the group consisting of: 
 Br—CF 2 —(C 6 F 4 )—Br,  
 Br—CF 2 —(C 6 F 4 )—(C 6 F 4 )—Br,  
 Br—(CF 2 )—(C 6 F 4 )—(C 6 F 4 )—(CF 2 )—Br,  
 Br—C 10 F 6 —Br,  
 Br—C 12 F 8 —Br,  
 Br—C 13 F 7 —Br,  
 Br—C 14 F 8 —Br,  
 Br—C 16 F 10 —Br,  
 Br—C 10 F 8 —Br,  
 Br—C 16 F 8 —Br, and  
 a positional isomer of the above.