Method for correcting characteristics of attenuated phase-shift mask

Abstract

A method for correcting characteristics of an attenuated phase-shift mask having an attenuated layer including (a) storing a data in a memory, which shows a correlation between characteristics and process conditions, (b) measuring the characteristics of the attenuated phase-shift mask, (c) calculating a appropriate process condition from the result of the step (b) and the data stored in the memory; and (d) soaking the attenuated phase-shift mask into a liquid solution for a certain time that is calculated in the step (c) to change thickness and composition of the attenuated layer.

1 . A method for correcting characteristics of an attenuated phase-shift mask having an attenuated layer, comprising: 
 (a) storing a data in a memory, which shows a correlation between characteristics and process conditions;    (b) measuring the characteristics of the attenuated phase-shift mask in order to examine whether or not the attenuated phase-shift mask has the characteristics with a desired value;    (c) correcting characteristics of the attenuated phase-shift mask having the attenuated layer by comparing the measurement result performed by the step (b) to the desired value of the characteristics of the attenuated phase-shift mask by the following step (d) and (e) when the measured value of the characteristics of the attenuated phase-shift mask is far from the desired value of the characteristics of the attenuated phase-shift mask;    (d) calculating a desired process condition from the result of the step (b) and the data stored in the memory by the step (a); and    (e) soaking the attenuated phase-shift mask into a liquid solution for a certain time that is calculated in the step (d) to change thickness and composition of the attenuated layer.    
     
     
         2 . A method for correcting characteristics of an attenuated phase-shift mask as claimed in  claim 1 , further comprising, (f) heating the liquid solution based on the calculation in the step (d) before performing the step (e).  
     
     
         3 . A method for correcting characteristics of an attenuated phase-shift mask as claimed in  claim 1 , wherein the characteristic to be corrected is transmittance of the attenuated phase-shift mask, wherein the liquid solution is an acid solution, and wherein the attenuated layer includes chrome.  
     
     
         4 . A method for correcting characteristics of an attenuated phase-shift mask as claimed in  claim 3 , wherein the attenuated layer is formed of chromium fluoride.  
     
     
         5 . A method for correcting characteristics of an attenuated phase-shift mask as claimed in  claim 3 , wherein the attenuated layer is formed of Chromium oxide and the liquid solution is sulfuric acid.  
     
     
         6 . A method for correcting characteristics of an attenuated phase-shift mask as claimed in  claim 1 , wherein the attenuated layer is formed of Molybdenum silicide and the liquid solution is sulfuric acid.  
     
     
         7 . A method for correcting characteristics of an attenuated phase-shift mask as claimed in  claim 1 , wherein the characteristic to be corrected is a phase difference of the attenuated phase-shift mask, wherein the liquid solution is an alkaline solution, and wherein the attenuated layer includes chrome.  
     
     
         8 . A method for correcting characteristics of an attenuated phase-shift mask as claimed in  claim 7 , wherein the attenuated layer is formed of chromium fluoride.  
     
     
         9 . A method for correcting characteristics of an attenuated phase-shift mask as claimed in  claim 7 , wherein the attenuated layer is formed of Chromium oxide and the liquid solution is ammonia.  
     
     
         10 . A method for correcting characteristics of an attenuated phase-shift mask as claimed in  claim 1 , wherein the attenuated layer is formed of Molybdenum silicide and the liquid solution is dilute ammonia.  
     
     
         11 - 20 . (cancelled)  
     
     
         21 . A method for fabricating an attenuated phase-shift mask, comprising: 
 (a) forming an attenuated layer on a substrate;    (b) forming a light shielding layer on the attenuated layer;    (c) patterning the light shielding layer and the attenuated layer simultaneously in order to form a circuit pattern having the patterned attenuated layer and the patterned light shielding layer, which is formed on the substrate,    whereby a primary attenuated phase-shift mask having the circuit pattern is formed; and    (d) changing phase difference of the primary attenuated phase-shift mask by soaking the primary attenuated phase-shift mask into an alkaline solution, whereby the attenuated phase-shift mask having desired phase difference is completed.    
     
     
         22 . A method for fabricating an attenuated phase-shift mask, comprising: 
 (a) forming an attenuated layer on a substrate;    (b) forming a light shielding layer on the attenuated layer;    (c) patterning the light shielding layer and the attenuated layer simultaneously in order to form a circuit pattern having the patterned attenuated layer and the patterned light shielding layer, which is formed on the substrate,    whereby a primary attenuated phase-shift mask having the circuit pattern is formed; and    (d) changing transmittance of the primary attenuated phase-shift mask by soaking the attenuated phase-shift mask into an acid solution, whereby the attenuated phase-shift mask having desired transmittance is completed.