Capacitor and memory structure and method

Abstract

A rugged polysilicon electrode for a capacitor has high surface area enhancement with a thin layer by high nucleation density plus gas phase doping which also enhances grain shape and oxygen-free dielectric formation.

1 . A capacitor, comprising: 
 (a) a first electrode, said first electrode including a surface of rugged polysilicon with a thickness of less than 30 nm;    (b) a dielectric on said surface; and    (c) a second electrode on said dielectric.    
     
     
         4 . The capacitor of  claim 1 , wherein: 
 (a) said first electrode has the shape of a cylinder portion plus a bottom portion with said surface of rugged polysilicon on both inside and outside of said cylinder portion.    
     
     
         5 . The capacitor of  claim 1 , wherein: 
 (a) said dielectric is oxidized silicon nitride.