US2004224533A1PendingUtilityA1

Method for increasing polysilicon granin size

33
Priority: May 7, 2003Filed: May 7, 2003Published: Nov 11, 2004
Est. expiryMay 7, 2023(expired)· nominal 20-yr term from priority
Inventors:Yao-Hui HuangTung-Li LeeChih-Hao LinYen-Fei LinJames J. SunBu-Fun ChenDavid Huang
H10D 64/0113C23C 16/0218C23C 16/24
33
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Claims

Abstract

The present invention relates to a method for increasing the grain size of a polysilicon layer, which includes exposing a silicon oxide wafer in a deposition chamber to an amount, effective for the purpose, of nitrogen at a flow rate of at least about 240 standard liters per minute (slm).

Claims

exact text as granted — not AI-modified
What is claimed is:  
     
         1 . In the manufacture of semiconductor devices, a method for increasing the grain size of a polysilicon layer in a furnace, which comprises exposing a silicon oxide wafer in a deposition chamber of the furnace to an amount, effective for the purpose, of nitrogen at a flow rate of at least about 240 standard liters per minute.  
     
     
         2 . The method as recited in  claim 1 , wherein the flow of nitrogen is achieved through nitrogen shower.  
     
     
         3 . The method as recited in  claim 1 , wherein the increasing of grain size results in an increase in semiconductor device speed.

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