Resistance variable memory element having chalcogenide glass for improved switching characteristics

Abstract

The present invention is related to methods of fabricating a resistance variable memory element and a device formed therefrom having improved switching characteristics. According to an embodiment of the present invention a resistance variable material memory element is annealed to remove stoichiometric amounts of a component of the resistance variable material. According to another embodiment of the present invention a silver-germanium-selenide glass is annealed for a duration of about 10 minutes in the presence of oxygen to drive off selenium and increase the rigidity of the glass.

1 - 33 . (Canceled).  
     
     
         34 . A resistance variable memory element comprising; 
 a first electrode;    an annealed silver-germanium-selenide glass in electrical communication with said first electrode; and    a second electrode in electrical communication with said annealed silver-germanium-selenide glass.    
     
     
         35 . The element of  claim 34  wherein said glass has a germanium molar concentration number greater than about 0.23.  
     
     
         36 . The element of  claim 34  wherein said glass has a mean coordination number of at least about 2.46.  
     
     
         37 . A chalcogenide element comprising: 
 an annealed silver doped germanium-selenide glass, wherein said glass has a germanium molar concentration number of greater than about 0.23.    
     
     
         38 . A chalcogenide element comprising: 
 an annealed silver doped germanium-selenide glass, wherein said glass has a mean coordination number of at least about 2.46.    
     
     
         39 . A resistance variable element comprising: 
 an annealed metal containing resistance variable material having an increased rigidity.    
     
     
         40 . The element of  claim 39  wherein said metal is silver.  
     
     
         41 . The element of  claim 39  wherein said annealed metal containing resistance variable material comprises a germanium-selenide glass.  
     
     
         42 . The element of  claim 41  wherein said germanium-selenide glass has a germanium molar concentration number of greater than about 0.23.  
     
     
         43 . The element of  claim 39  wherein said annealed metal containing resistance variable material has a mean coordination number of at least about 2.46.  
     
     
         44 . The element of  claim 39  wherein said annealed metal containing resistance variable material comprises a silver doped germanium-selenide.  
     
     
         45 . A resistance variable element comprising: 
 an annealed metal containing resistance variable materials having an increased rigidity;    at least one access transistor and at least one capacitor for storing a data value which is associated with said access transistor, and    at least one metal plug electrically connected to an active area of said transistor.    
     
     
         46 . The element of  claim 45  wherein said metal comprises silver.  
     
     
         47 . The element of  claim 45  wherein said annealed metal containing resistance variable material comprises a germanium-selenide glass.  
     
     
         48 . The element of  claim 47  wherein said germanium-selenide glass has a germanium molar concentration number of greater than about 0.23.  
     
     
         49 . The element of  claim 45  wherein said annealed metal containing resistance variable material has a mean coordination number of at least about 2.46.  
     
     
         50 . The device element of  claim 45  wherein said annealed metal containing resistance variable material comprises a silver doped germanium-selenide.  
     
     
         51 . A computer device having a memory, said memory comprising: 
 an annealed metal containing resistance variable material having increased rigidity.    
     
     
         52 . The device of  claim 51  wherein said metal comprises silver.  
     
     
         53 . The device of  claim 51  wherein said annealed metal containing resistance variable material comprises a germanium-selenide glass.  
     
     
         54 . The device of  claim 53  wherein said germanium-selenide glass has a germanium molar concentration number of greater than about 0.23.  
     
     
         55 . The device of  claim 51  wherein said annealed metal containing resistance variable material has a mean coordination number of at least about 2.46.  
     
     
         56 . The device of  claim 51  wherein said annealed metal containing resistance variable material comprises a silver doped germanium-selenide.  
     
     
         57 . A resistance variable element comprising: 
 an annealed resistance variable material having an increased rigidity.    
     
     
         58 . The element of  claim 57  wherein said annealed resistance variable material comprises silver.  
     
     
         59 . The device element of  claim 57  wherein said annealed resistance variable material comprises a germanium-selenide glass.