Method of cleaning a deposition chamber and apparatus for depositing a metal on a substrate

Abstract

A method of cleaning a deposition chamber includes applying an RF power to a first region of a deposition chamber where a metal oxide layer is attached. The metal oxide layer in the first region is thicker than the metal oxide layer existing at a second region of the deposition chamber. The RF power increases a plasma sheath potential in the first region to a value that is greater than that of a plasma sheath potential in the second region. An etching gas is introduced into the deposition chamber to remove the metal oxide layer. The metal oxide layer attached to the deposition chamber may be rapidly removed by the in-situ process without opening of the deposition chamber.

What is claimed is:  
     
         1 . A method of cleaning a deposition chamber, the deposition chamber comprising a first region and a second region, a portion of a metal oxide layer attached to the first region being thicker than a portion of the metal oxide layer attached to the second region, the method comprising: 
 applying a first radio frequency power to the first region of the deposition chamber to increase a plasma sheath potential in the first region to a value that is greater than that of a plasma sheath potential in the second region; and    introducing an etching gas into the deposition chamber to remove the metal oxide layer.    
     
     
         2 . The method of  claim 1 , wherein the first radio frequency power is in a range of about 500 watts to about 4,000 watts.  
     
     
         3 . The method of  claim 1 , wherein the deposition chamber includes an upper plate, a lower plate and a sidewall connecting the upper plate to the lower plate, and the first radio frequency power is applied to the upper plate.  
     
     
         4 . The method of  claim 3 , wherein the lower plate and the sidewall are grounded.  
     
     
         5 . The method of  claim 3 , wherein the sidewall is grounded, and a second RF power is applied to the lower plate.  
     
     
         6 . The method of  claim 5 , wherein applying the second radio frequency power to the lower plate is performed after applying the first radio frequency power to the upper plate.  
     
     
         7 . The method of  claim 5 , wherein the first RF power is greater than the second RF power.  
     
     
         8 . The method of  claim 1 , wherein the pressure of the deposition chamber is below about 1 Torr.  
     
     
         9 . The method of  claim 1 , wherein temperature of the deposition chamber is about 20° C. to about 1,000° C.  
     
     
         10 . The method of  claim 1 , further comprising introducing an inert gas into the deposition chamber.  
     
     
         11 . The method of  claim 10 , wherein the inert gas is introduced into the deposition chamber at a flow rate of about 10 sccm to about 500 sccm.  
     
     
         12 . The method of  claim 1 , wherein the deposition chamber is an atomic layer deposition (ALD) chamber.  
     
     
         13 . The method of  claim 1 , wherein the metal oxide layer is an aluminum oxide layer.  
     
     
         14 . The method of  claim 13 , wherein the etching gas comprises boron trichloride (BCl 3 ), carbon tetrachloride (CCl 4 ) or boron tribromide (BBr 3 ).  
     
     
         15 . The method of  claim 14 , wherein the boron trichloride gas is introduced into the deposition chamber at a flow rate of about 10 sccm to about 500 sccm.  
     
     
         16 . An apparatus for depositing a metal on a substrate comprising: 
 a deposition chamber including a lower plate on which the substrate is disposed, an upper plate for providing gases, and a sidewall connecting the lower plate to the upper plate;    gas supply lines for providing the gases into the deposition chamber through the upper plate, the gases comprising a depositing gas or a cleaning gas;    a first plasma generator for applying a first radio frequency power to the upper plate to form a plasma in the deposition chamber; and    exhaust lines for exhausting by-products generated in the deposition chamber.    
     
     
         17 . The apparatus of  claim 16 , further comprising a second plasma generator for applying a second radio frequency power to the lower plate.  
     
     
         18 . The apparatus of  claim 16 , wherein the exhaust lines are connected to the deposition chamber through the lower plate.  
     
     
         19 . An apparatus for depositing a metal on a substrate comprising: 
 a deposition chamber comprising a lower plate on which the substrate is disposed, an upper plate for providing gases, and a sidewall connecting the lower plate to the upper plate;    gas supply lines for providing the gases into the deposition chamber through the upper plate, the gases comprising a depositing gas or a cleaning gas;    a plasma generator that selectively applies a first radio frequency power and a second radio frequency power to the upper plate and the lower plate, respectively, to form a plasma in the deposition chamber; and    exhaust lines that exhaust by-products generated in the deposition chamber.    
     
     
         20 . The apparatus of  claim 19 , further comprising a switch that selectively connects the plasma generator to the upper plate and the lower plate.  
     
     
         21 . The apparatus of  claim 19 , wherein the exhaust lines are connected to the deposition chamber through the lower plate.  
     
     
         22 . The apparatus of  claim 19 , wherein the plasma generator comprises a power double matchbox that is electrically connected to the lower plate and the upper plate.  
     
     
         23 . The apparatus of  claim 20 , wherein the plasma generator comprises a power matchbox that is electrically connected to the lower plate and the upper plate by the switch.