Method of manufacturing a semiconductor device

Abstract

A method of manufacturing a semiconductor device is provided. A polysilicon film and a rough-surfaced polysilicon film are formed on inter-layer insulating film including side and bottom surfaces of openings formed in inter-layer insulating film. A photoresist is formed on the rough-surfaced polysilicon film. The photoresist, the rough-surfaced polysilicon film and the polysilicon film that are located on the top surface of inter-layer insulating film are removed by the CMP method. The polysilicon film and rough-surfaced polysilicon film are etched in a predetermined atmosphere to make the position of the top end of storage nodes lower than the top surface of inter-layer insulating film.

1 - 5 . (Cancelled).  
     
     
         6 . A method of manufacturing a semiconductor device, comprising the steps of: 
 forming an insulating film on a semiconductor substrate;    forming an opening in said insulating film;    forming a conductive layer on said insulating film including side and bottom surfaces of said opening;    forming a coating layer on said conductive layer including an inner side of said opening;    providing a predetermined removal process to said coating layer and said conductive layer located on said insulating film to make a top end of said conductive layer lower than a top surface of said insulating film to form a first electrode portion;    forming a second electrode portion, with a dielectric film interposed, on said first electrode portion; and    removing said insulating film located on an outer side of said first electrode portion after forming of said first electrode portion and before forming of said dielectric film.    
     
     
         7 - 9  (Cancelled).