Semiconductor device and method of manufacturing the same

Abstract

A hard mask 105 of SiCN is formed on a fluorine-containing carbon film 103. Thus, the adhesion of the hard mask 105 to the fluorine-containing carbon 103 is improved and inhibited from being peeled off. The hard mask 105 of SiCN can have a higher etch-selectivity than those of conventional hard masks, and can have a lower dielectric constant than that of SiN or SiC.

1 . A semiconductor device comprising: 
 a semiconductor substrate, on which an active region is formed;    a plurality of wiring layers which are formed on said semiconductor substrate;    a first insulating layer containing carbon, said first insulating layer being formed at least between any adjacent two of said wiring layers; and    a second insulating layer comprising silicon, carbon and nitrogen, said second insulating layer being formed on said first insulating layer.    
     
     
         2 . A semiconductor device as set forth in  claim 1 , wherein said second insulating layer further comprises boron.  
     
     
         3 . A semiconductor device as set forth in  claim 1 , which further comprises an adhesion layer which comprises a high-melting point metal and a nitride thereof, said adhesion layer being formed in the interface between said first insulating layer and said wiring layers.  
     
     
         4 - 9 . (Cancelled).  
     
     
         10 . A semiconductor device as set forth in  claim 2 , which further comprises an adhesion layer which comprises a high-melting point metal and a nitride thereof, said adhesion layer being formed in the interface between said first insulating layer and said wiring layers.