US2004217470A1PendingUtilityA1

Circuit substrates, semiconductor devices, semiconductor manufacturing apparatuses, methods for manufacturing circuit substrates, and methods for manufacturing semiconductor devices

Priority: Feb 26, 2003Filed: Feb 24, 2004Published: Nov 4, 2004
Est. expiryFeb 26, 2023(expired)· nominal 20-yr term from priority
H10W 90/734H10W 90/724H10W 72/07251H10W 72/07236H10W 72/07178H10W 72/07141H10W 72/856H10W 72/0711H10W 72/252H10W 72/90H10W 72/073H10W 72/072H10W 72/20H10W 74/15H10W 74/012H10W 72/30H10W 70/688H10W 70/048Y10T29/49165Y10T29/49144Y10T29/4913Y10T29/49146
39
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Claims

Abstract

A method is provided to control the height of bump electrodes and increase a clearance between edge sections of a semiconductor chip and lead terminals of a tape substrate. By pushing up on a tape substrate by a bonding stage, and applying suction to the tape substrate through a suction groove, boundary portions of a semiconductor chip mounting region are drawn into the suction groove, and curved sections are formed in the tape substrate at locations corresponding to edge sections of a semiconductor chip and inclined sections disposed in outer circumference sections of the curved sections are formed in the tape substrate.

Claims

exact text as granted — not AI-modified
What is claimed is:  
     
         1 . A circuit substrate comprising: 
 a chip mounting region for mounting a chip;    a mounting substrate which recedes at a boundary of the chip mounting region and inclines in a circumference of the chip mounting region; and    lead terminals on the mounting substrate and extending over the chip mounting region.    
     
     
         2 . A semiconductor device comprising: 
 a circuit substrate having lead terminals formed thereon;    a semiconductor chip connected to the lead terminals through bump electrodes;    a concave section that is provided in the circuit substrate and disposed at a position corresponding to an edge position of the semiconductor chip; and    an inclined section of the mounting substrate in an outer circumferential section of the edge position.    
     
     
         3 . A semiconductor device according to  claim 2 , wherein a boundary between the concave section and the inclined section and a flat section is disposed at a position outside the lead terminals and edge sections of bump electrodes of the semiconductor chip, and inside the edge section of the semiconductor chip.  
     
     
         4 . A semiconductor device according to  claim 2 , wherein the concave section and the inclined section include a region between the bump electrodes and the edge position of the semiconductor chip.  
     
     
         5 . A semiconductor manufacturing apparatus comprising: 
 a bonding stage that supports a circuit substrate;    a mounting device that mounts a semiconductor chip on the circuit substrate;    at least one of a groove and a hole that is provided in the bonding stage at a position corresponding to the edge position of the semiconductor chip; and    an inclined surface of the bonding stage at an outer circumference section of the edge position.    
     
     
         6 . A semiconductor manufacturing apparatus according to  claim 5 , further comprising: 
 a suction device that is provided at the bonding stage to apply suction to the at least one of the groove and the hole; and    a suction control device that controls the suction timing by the suction device based on a heating state of the circuit substrate.    
     
     
         7 . A semiconductor manufacturing apparatus according to  claim 5 , further comprising a heating device that locally heats a region in the circuit substrate corresponding to the edge position of the semiconductor chip.  
     
     
         8 . A semiconductor manufacturing apparatus according to  claim 7 , wherein the heating device comprises a laser irradiating device.  
     
     
         9 . A semiconductor manufacturing apparatus comprising: 
 a bonding head that retains a semiconductor chip;    a first temperature control device that controls a temperature of the bonding head;    a bonding stage that supports a tape substrate;    a second temperature control device that controls a temperature of the bonding stage;    at least one of a suction groove and a suction hole that is provided in the bonding stage and disposed at a position corresponding to an edge position of the semiconductor chip;    an inclined surface of the bonding stage in an outer circumference section of the edge position;    a vacuum pump that applies suction to the at least one of the suction groove and the suction hole;    a clamp device that clamps the tape substrate;    a first image recognition device that performs image recognition of the semiconductor chip;    a second image recognition device that performs image recognition of the tape substrate;    a first positioning device that positions the bonding stage in X·Y·θ directions based on a result of the image recognition by the second image recognition device;    a second positioning device that positions the bonding head in X·Y·θ directions based on a result of the image recognition by the second image recognition devices;    a first pressing device that presses the bonding stage against the tape substrate, after the bonding stage is positioned by the first positioning device; and    a second pressing device that presses the semiconductor chip retained by the bonding head against the tape substrate, after the bonding head is positioned by the second positioning device.    
     
     
         10 . A semiconductor manufacturing apparatus according to  claim 9 , wherein the at least one of the groove and the hole includes a region between the bump electrodes provided on the semiconductor chip and the edge position of the semiconductor chip.  
     
     
         11 . A semiconductor manufacturing apparatus according to  claim 9 , wherein the at least one of the groove and the hole is chamfered or has rounded corners.  
     
     
         12 . A method for manufacturing a semiconductor device, comprising: 
 a step for supporting a back surface of a circuit substrate by using a bonding stage having at least one of a groove and a hole disposed at a position corresponding to an edge position of a semiconductor chip and an inclined surface provided in an outer circumference section of the edge position;    a step of applying suction to the at least one of the groove and the hole provided in the bonding stage;    a step of mounting the semiconductor chip on the circuit substrate while applying suction to the at least one of the groove and the hole; and    a step of sealing with resin the semiconductor chip mounted on the circuit substrate.    
     
     
         13 . A method for manufacturing a semiconductor device, comprising: 
 a step of coating resin in a region inside inner leads on a circuit substrate;    a step for supporting a back surface of the circuit substrate by using a bonding stage having at least one of a groove and a hole disposed at a position corresponding to an edge position of a semiconductor chip and an inclined surface provided in an outer circumference section of the edge position;    a step of applying suction to the at least one of the groove and the hole provided in the bonding stage; and    a step of mounting the semiconductor chip on the circuit substrate while applying suction to the at least one of the groove and the hole.    
     
     
         14 . A method for manufacturing a semiconductor device, comprising: 
 a step for supporting a back surface of a circuit substrate by using a bonding stage having at least one of a groove and a hole disposed at a position corresponding to an edge position of a semiconductor chip and an inclined surface provided in an outer circumference section of the edge position;    a step of mounting the semiconductor chip on the circuit substrate: and    a step of applying suction to the at least one of the groove and the hole provided in the bonding stage, after mounting the semiconductor chip.    
     
     
         15 . A method for manufacturing a semiconductor device according to  claim 14 , further comprising a step of heating the circuit substrate when applying suction to the at least one of the groove and the hole.  
     
     
         16 . A method for manufacturing a semiconductor device comprising: 
 a step of transferring a circuit substrate having a concave section formed at a position corresponding to an edge position of a semiconductor chip and an inclined section provided in an outer circumference section of the concave section;    a step of mounting the semiconductor chip on the circuit substrate that has been transferred; and    a step of sealing with resin the semiconductor chip that is mounted on the circuit substrate.    
     
     
         17 . A method for manufacturing a semiconductor device comprising: 
 a step of transferring a tape substrate;    a step of clamping the transferred tape substrate;    a step of performing image recognition of the tape substrate;    a step of positioning a bonding stage that is provided with an inclined surface corresponding to an outer circumference position of the edge position of the semiconductor chip in X·Y·θ directions based on a result of the image recognition of the tape substrate;    a step of pressing the positioned bonding stage against a back surface of the tape substrate, and bending the tape substrate along the inclined surface provided in the bonding stage;    a step of applying suction to a region of a semiconductor chip corresponding to the edge position thereof through at least one of a groove and a hole provided in the bonding stage;    a step of performing image recognition of the tape substrate pressed against the bonding stage and the semiconductor chip;    a step of positioning a bonding head that retains the semiconductor chip in X·Y·θ directions based on a result of the image recognition of the tape substrate and the semiconductor chip;    a step of pressing the semiconductor chip that is retained by the bonding head positioned against the tape substrate;    a step of forming the tape substrate by using radiant heat radiating from the bonding head;    a step of releasing the pressing of the bonding head;    a step of releasing the pressing of the bonding stage; and    a step of releasing the clamping.    
     
     
         18 . A method for manufacturing a circuit substrate, comprising: 
 a step of forming lead terminals on a mounting substrate; and    a step of forming a concave section disposed at a position corresponding to an edge position of a semiconductor chip and an inclined section disposed in an outer circumference section of the concave section by metal-molding of the mounting substrate.    
     
     
         19 . A semiconductor manufacturing apparatus according to  claim 5 , wherein the at least one of the groove and the hole includes a region between the bump electrodes provided on the semiconductor chip and the edge position of the semiconductor chip.  
     
     
         20 . A semiconductor manufacturing apparatus according to  claim 5 , wherein the at least one of the groove and the hole is chamfered or has rounded corners.  
     
     
         21 . A method for manufacturing a semiconductor device according to  claim 12 , further comprising a step of heating the circuit substrate when applying suction to the at least one of the groove and the hole.  
     
     
         22 . A method for manufacturing a semiconductor device according to  claim 13 , further comprising a step of heating the circuit substrate when applying suction to the at least one of the groove and the hole.

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