Slurry compositions for use in a chemical-mechanical planarization process

Abstract

A chemical-mechanical abrasive composition for use in semiconductor processing uses abrasive particles having a non-spherical morphology.

What is claimed is:  
     
         1 . A chemical-mechanical planarization abrasive slurry comprising primary abrasive particles having a non-spherical morphology.  
     
     
         2 . The slurry of  claim 1  wherein said abrasive particles having a non-spherical morphology are selected from mica, talc, laminar clays, graphite flake, glass flake, and synthetic polymer flake.  
     
     
         3 . The slurry of  claim 2  wherein said abrasive particles comprise laminar clay.  
     
     
         4 . The slurry of  claim 3  wherein said clay particles have been calcined at a temperature of at least 1200° F.  
     
     
         5 . The slurry of  claim 1  wherein said slurry comprises up to about 20 weight % of said abrasive particles.  
     
     
         6 . The slurry of  claim 5  wherein said slurry comprises about 0.5 to about 8 weight % of said abrasive particles.  
     
     
         7 . The slurry of  claim 1  wherein said abrasive particles have an average diameter of less than about 1 micron.  
     
     
         8 . The slurry of  claim 7  wherein said abrasive particles have an average diameter of about 0.01 to about 0.5 micron.  
     
     
         9 . The slurry of  claim 1 , wherein said abrasive particles have a Mohs hardness within the range of about 1 to about 6.  
     
     
         10 . The slurry of  claim 1  wherein said non-spherical abrasive particles have been modified via complexation with other components.  
     
     
         11 . The slurry of  claim 10  wherein said modified non-spherical abrasive particles are substantially separated by inorganic cations.  
     
     
         12 . The slurry of  claim 1  wherein said non-spherical abrasive particles are at least partially coated.  
     
     
         13 . The slurry of  claim 12  wherein said non-spherical abrasive particles are at least partially coated with platelets, polymer, carbon, organic functional groups, or crystallites.  
     
     
         14 . A method of planarizing a semiconductor with a chemical-mechanical abrasive slurry, said semiconductor comprising a surface of semiconductive material, metal, dielectric material or mixtures thereof, said method comprising contacting said surface with said chemical-mechanical abrasive slurry, said chemical-mechanical abrasive slurry comprising a primary particle abrasive having a non-spherical morphology.  
     
     
         15 . The method of  claim 14  wherein said particle abrasive is selected from mica, talc, laminar clays, graphite flake, glass flake, and synthetic polymer flake.  
     
     
         16 . The method of  claim 15  wherein said particle abrasive is laminar clay.  
     
     
         17 . The method of  claim 16  wherein said clay has been calcined at a temperature of at least 1200° F.  
     
     
         18 . The method of  claim 14  wherein said slurry contains up to about 20% by weight of said particle abrasive.  
     
     
         19 . The method of  claim 14  wherein said slurry comprises from about 0.5 to about 8 weight % of said particle abrasive.  
     
     
         20 . The method of  claim 14  wherein said particle abrasive has an average diameter of less than about 1 micron.