ZnSe based light emitting device with In layer

Abstract

A light emitting device includes an LED chip fixed to an electrode body via a conductive layer of In or an In alloy. The conductive layer is in ohmic-contact with an n-type ZnSe crystal substrate of the LED chip. To make the device, In or an In alloy is melted oil the electrode body, the ZnSe substrate is placed directly on tile melted In or In alloy and then subjected to at least one of vibration and pressure to achieve a good bond and ohmic contact between the In or In alloy and tile ZnSe substrate.

What is claimed is:  
     
         1 . A light emitting device comprising: 
 an n-type Zn substrate;    an electrode base; and    a conductive layer of In or an In alloy, fixing said n-type ZnSe substrate to said electrode base together and also serving as an ohmic electrode for said n-type ZnSe substrate.    
     
     
         2 . The light emitting device of  claim 1 , wherein said electrode base includes a lead frame.  
     
     
         3 . The light emitting device of  claim 1 , wherein said electrode base includes an electrode provided on an insulating substrate.  
     
     
         4 . The light emitting device of  claim 1 , including a ZnSe homoepitaxial light emitting diode having on said n-type ZnSe substrate an epitaxial light emitting layer formed of ZnSe-related compounds.  
     
     
         5 . The light emitting device of  claim 1 , wherein said n-type ZnSe substrate has a carrier concentration of at least 3×10 17  cm −3  and less than 3×10 18  cm −3 .  
     
     
         6 . The light emitting device of  claim 1 , operating on a voltage of no more than 3V.