Barrier formation using novel sputter-deposition method

Abstract

Methods and apparatus are provided for forming a metal or metal silicide barrier layer. In one aspect, a method is provided for processing a substrate including positioning a substrate having a silicon material disposed thereon in a substrate processing system, depositing a first metal layer on the substrate surface in a first processing chamber, forming a metal silicide layer by reacting the silicon material and the first metal layer, and depositing a second metal layer in situ on the substrate in a second processing chamber. In another aspect, the method is performed in an apparatus including a load lock chamber, the intermediate substrate transfer region including a first substrate transfer chamber and a second substrate transfer chamber, a physical vapor deposition processing chamber coupled to the first substrate transfer chamber, and a chemical vapor deposition chamber coupled to the second substrate transfer chamber.

What is claimed is:  
     
         1 . A reactor for sputtering a magnetic material, comprising: 
 a target comprising the magnetic material disposed in a chamber;    a pedestal disposed in the chamber for supporting a substrate having a diameter at a position separated from the target by a throw distance of at least 50% of the diameter;    a magnetron positioned adjacent the target opposite the pedestal; and    a grounded collimator positioned between the pedestal and the target, wherein the collimator comprises an outer ring and at least two inner rings.    
     
     
         2 . The reactor of  claim 1 , wherein the collimator is supported on and electrically connected to a shield.  
     
     
         3 . The reactor of  claim 2 , wherein a side of the collimator facing the target is separated from the substrate by no more than 40% of the throw distance.  
     
     
         4 . The reactor of  claim 1 , wherein the at least two inner rings are concentrically disposed within the outer ring.  
     
     
         5 . The reactor of  claim 4 , wherein the at least two inner rings are positioned to direct the magnetic material towards the substrate containing high-aspect ratio apertures.  
     
     
         6 . The reactor of  claim 5 , wherein the at least two inner rings independently have an inner ring length greater than a length of the outer ring.  
     
     
         7 . The reactor of  claim 5 , wherein at least one inner strut is positioned between the at least two inner rings.  
     
     
         8 . The reactor of  claim 7 , wherein at least one outer strut is positioned between the outer ring and the at least two inner rings.  
     
     
         9 . A plasma sputter reactor, comprising: 
 a pedestal disposed in a chamber for supporting a substrate to be sputter coated;    a target disposed in the chamber between a magnetron and the pedestal;    a grounded shield disposed in the chamber; and    a collimator positioned between the pedestal and the target and supported and electrically fixed to the grounded shield, wherein the collimator comprises an outer ring and at least two inner rings.    
     
     
         10 . The reactor of  claim 9 , wherein the grounded shield comprises a tubular upper portion generally of a first diameter and a tubular lower portion generally of a second diameter less than the first diameter and connected by a radially extending ledge on which the collimator is supported.  
     
     
         11 . The reactor of  claim 9 , wherein a side of the collimator facing the target is separated from the substrate by no more than 40% of a throw distance.  
     
     
         12 . The reactor of  claim 9 , wherein the at least two inner rings are concentrically disposed within the outer ring.  
     
     
         13 . The reactor of  claim 12 , wherein the at least two inner rings are positioned to direct the sputtered material towards the substrate containing high-aspect ratio apertures.  
     
     
         14 . The reactor of  claim 13 , wherein the at least two inner rings independently have an inner ring length greater than a length of the outer ring.  
     
     
         15 . The reactor of  claim 13 , wherein at least one inner strut is positioned between the at least two inner rings.  
     
     
         16 . The reactor of  claim 15 , wherein at least one outer strut is positioned between the outer ring and the at least two inner rings.  
     
     
         17 . A ring collimator used to collimate sputtered material in a plasma reaction chamber, comprising: 
 an outer ring having a surface for electrically grounding to the plasma reaction chamber;    at least two inner rings concentrically disposed within the outer ring;    at least three inner struts positioned between the at least two inner rings; and    at least three outer struts positioned between the outer ring and the at least two inner rings.    
     
     
         18 . The ring collimator of  claim 17 , wherein each inner strut and each outer strut is located on a diameter of the ring collimator and the inner strut and the outer strut are not on the same radius of the ring collimator.  
     
     
         19 . The ring collimator of  claim 17 , further comprising a cylindrical shield having a surface for receiving the surface of the outer ring.  
     
     
         20 . The ring collimator of  claim 18 , wherein the first and second inner rings independently have an inner ring length greater than a length of the outer ring.