Insulating film of semiconductor device and coating solution for forming insulating film and method of manufacturing insulating film

Abstract

An insulating film which enables not only to obtain a good film quality but to achieve an excellent filling property, thick film formation and planarization simultaneously, an insulating film forming coating solution for forming the insulating film, and a method of manufacturing the insulating film are set forth. An insulating film forming coating solution containing as a main component a solution of a polymer obtained by co-hydrolysis of trialkoxysilane expressed by a general formula, SiH(OR) 3 , methyltrialkoxysilane expressed by a general formula, SiCH 3 (OR) 3 , and tetraalkoxysilane expressed by a general formula, Si(OR) 4 is coated on a semiconductor substrate ( 1 ) having a step portion, and after it is dried and heated in an inert gas atmosphere, an insulating film ( 6 ) which is composed of a silane-derived compound expressed by a general formula, SiH x (CH 3 ) y O 2−(x+y)/2 , where, 0<x<1, 0<y<1,x+y≦1 is formed.

What is claimed is:  
     
         1 . A method of forming a semiconductor device, comprising: 
 providing a semiconductor substrate having wiring lines thereon;    forming an insulating film that covers the entire upper surface of the wiring lines, a major portion of the insulating film comprising a silane-derived compound including silicon, oxygen, hydrogen and carbon atoms, wherein Si—H and Si—C bonds are present in the compound, and wherein all of the insulating film has been heated at a temperature of about 400° C. and a proportion of the Si—C bonds to the silicon atoms is not less than 0.2.    
     
     
         2 . The method of  claim 1 , wherein all of the Si—C bonds in the compound are formed between the silicon atoms and methyl groups, and optionally between the silicon atoms and phenyl groups.  
     
     
         3 . The method of  claim 1 , wherein at least 20% of the silicon atoms are each bonded to three of the oxygen atoms and one of the carbon atoms.  
     
     
         4 . The method of  claim 1 , wherein an amount of the Si—H bonds is sufficient to reduce a dielectric constant of the insulating film.  
     
     
         5 . The method of  claim 1 , wherein the major portion of the insulating film consists essentially of silicon atoms each bonded to at least three oxygen atoms.  
     
     
         6 . The method of  claim 1 , wherein the proportion of the Si—C bonds to the silicon atoms is between 0.2 and 0.8.  
     
     
         7 . A method of forming a semiconductor device, comprising: 
 providing a semiconductor substrate having wiring lines thereon;    forming an insulating film that covers the entire upper surface of the wiring lines, a major portion of the insulating film comprising a silane-derived compound including silicon, oxygen, hydrogen and carbon atoms, a crosslinked network of Si—O—Si being developed in all of the compound, wherein Si—H and Si—C bonds are present in the compound and at least 20% of the silicon atoms are each bonded to three of the oxygen atoms and one of the carbon atoms.    
     
     
         8 . The method of  claim 7 , wherein all of the Si—C bonds in the compound are formed between the silicon atoms and methyl groups, and optionally between the silicon atoms and phenyl groups.  
     
     
         9 . The method of  claim 7 , wherein the major portion of the insulating film consists essentially of silicon atoms each bonded to at least three oxygen atoms.  
     
     
         10 . The method of  claim 7 , wherein a proportion of the Si—C bonds to the silicon atoms is between 0.2 and 0.8.  
     
     
         11 . The method of  claim 7 , wherein an amount of the Si—H bonds is sufficient to reduce a dielectric constant of the insulating film.  
     
     
         12 . A method of forming a semiconductor device, comprising: 
 providing a semiconductor substrate having wiring lines thereon;    forming a silicon-oxygen based insulating film that covers the entire upper surface of the wiring lines, the insulating film comprising silicon, oxygen, hydrogen and carbon atoms, wherein Si—H and Si—C bonds are present in the insulating film, and wherein all of the insulating film has been heated at a temperature of about 400° C. and a proportion of the Si—C bonds to the silicon atoms is not less than 0.2.    
     
     
         13 . The method of  claim 12 , wherein at least 20% of the silicon atoms are each bonded to three of the oxygen atoms and one of the carbon atoms.  
     
     
         14 . The method of  claim 12 , wherein an amount of the Si—H bonds is sufficient to reduce a dielectric constant of the insulating film.  
     
     
         15 . The method of  claim 12 , wherein the insulating film consists essentially of silicon atoms each bonded to at least three oxygen atoms.  
     
     
         16 . The method of  claim 12 , wherein the proportion of the Si—C bonds to the silicon atoms is between 0.2 and 0.8.  
     
     
         17 . A method of forming a semiconductor device, comprising: 
 providing a semiconductor substrate having wiring lines thereon;    forming a silicon-oxygen based insulating film that covers the entire upper surface of the wiring lines, the insulating film comprising silicon, oxygen, hydrogen and carbon atoms, wherein Si—H and Si—C bonds are present in the insulating film, a crosslinked network of Si—O—Si being developed in all of the insulating film, and at least 20% of the silicon atoms are each bonded to three of the oxygen atoms and one of the carbon atoms.    
     
     
         18 . The method of  claim 17 , wherein the insulating film consists essentially of silicon atoms each bonded to at least three oxygen atoms.  
     
     
         19 . The method of  claim 17 , wherein a proportion of the Si—C bonds to the silicon atoms is between 0.2 and 0.8.  
     
     
         20 . The method of  claim 17 , wherein an amount of the Si—H bonds is sufficient to reduce a dielectric constant of the insulating film.